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NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices Qualified Level 2N6032 2N6033 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector - Emitter Voltage V CEO 90 120 Vdc Collector - Base V oltage V CBO 120 150 Vdc Collector Current IC 50 40 Adc Emitter - Base Voltage V EBO 7.0 Vdc Base Current IB 10 Adc Total Power Dissipation @ T C = +25 0 C (1) P T 140 W Operating & Storage Temperature Range T op , T stg - 65 to +200 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case R θJC 1.25 0 C/W 1) Derate linearly 800 mW/ 0 C between T C = 25 0 C and T C = 200 0 C TO - 3* (TO - 204AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 200 mAdc 2N6032 2N6033 V (BR) CEO 120 Vdc Collector - Emitter Breakdown Voltage I C = 200 mAdc 2N6032 2N6033 V (BR) CER 110 140 Vdc Collector - Emitter Breakdown Voltage I C = 200 mAdc, V EB = 1.5 Vdc 2N6032 2N6033 V (BR) CEX 120 150 Vdc Collector - Base Cutoff Current V CB = 120 Vdc 2N6032 V CB = 150 Vdc 2N6033 ICBO mAdc Collector - Emitter Cutoff Curr ent V CE = 110 Vdc, V BE = - 1.5 Vdc 2N6032 V CE = 135 Vdc, V BE = - 1.5 Vdc 2N6033 ICEX mAdc
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2N6032, 2N6033, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS (con’t) Emitter - Base Cutoff Current V EB = 7.0 Vdc IEBO 10 mAdc Collector - Emitter Cutoff Current V CE = 80 Vdc ICEO 10 m Adc ON CHARACTERISTICS (2) Forward - Current Transfer Ratio I C = 50 Adc, V CE = 2.6 Vdc 2N6032 I C = 40 Adc, V CE = 2.0 Vdc 2N6033 h FE Collector - Emitter Saturation Voltage I C = 50 Adc, I B = 5.0 Adc 2N6032 I C = 40 Adc, I B = 4. 0 Adc 2N6033 V CE(sat) 1.3 1.0 Vdc Base - Emitter Saturation Voltage I C = 50 Adc, I B = 5.0 Adc 2N6032 I C = 40 Adc, I B = 4.0 Adc 2N6033 V BE(sat) 2.0 2.0 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small - Signal Short - Circuit Forwa rd Current Transfer Ratio I C = 2.0 Adc, V CE = 10 Vdc, f = 5.0 MHz h fe 10 40 Output Capacitance V CB = 10 Vdc, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 1,000 pF SWITCHING CHARACTERISTICS Turn - On Time V CC = 30 Vdc; I C = 50 Adc; I B = 5.0 Adc 2N6032 V CC = 30 Vdc; I C = 40 Adc; I B = 4.0 Adc 2N6033 ton 0.5 0.5 µs Turn - Off Time V CC = 30 Vdc ±2; I C = 50 Adc; I B1 = 5 I B2 = - 5 Adc 2N6032 V CC = 30 Vdc ±2; I C = 40 Adc; I B1 = 4 I B2 = - 4 Adc 2N6033 toff 2.0 2.0 µs SAFE OPERATING AREA DC Tests T C = +25 0 C, 1 Cycle, t = 1.0 s Test 1 V CE = 2.8 Vdc, I C = 50 Adc 2N6032 Test 2 V CE = 3.5 Vdc, I C = 40 Adc 2N6033 Test 3 V CE = 24 Vdc, I C = 5.8 Adc All Types Test 4 V CE = 40 Vdc, I C = 0.9 Adc All Types Test 5 V CE = 90 Vdc, I C = 0.18 Adc 2N60 32 Test 6 V CE = 120 Vdc, I C = 0.1 Adc 2N6033 (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2