2N6032 GESS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

3875081 GE soLID state [2 DE 3875081 0017134 3 J t-33°13

2N6032, 2N6033 File Number 462 : High-Current, High-Speed ‘TERMINAL DESIGNATIONS | High-Power Transistors Sen e (runt Silicon N-P-N Types for High-Speed Switching and | Linear-Amplifier Applications In Military, Industrial and © . Commercial Equipment ® Features: . © Low Vee(sat)=1 V max. at 40 A, 1.3 V max. at 60. > = Maximum safe-area-of-operation curves eceaeis {aa tint tne baginning at 24Vv «= Fast storage time: TO-204A1 teat.5u9 max. at lo=40 A (2N6033), 60 A (2N6032) JEDEG TO-204AE The RCA-2N6032 and 2N6033° are epitaxial silicon n-p-n SS = ean Toe Ouse svioeiniTe FURTION = Esl transistors having high-current and high-power handling kg Gp MEtNRGRSSU ESS sean we Bec capability and fast switching speed, The 2N6033 Is similar fae fate roca "5 to the 2N6032; they differ in maximum values for continuous es Soegs epee eooes boss poss Soo os collector current and sustaining voltage. Hd et ces ee eee ‘They are supplied in the JEDEC TO-204AE hermetic stee! Est erste eel j= ESt package with 0.080-inch diameter pins. Hi ESS aa "Formerly RGA Dev, Types TATEST and TATSSTA, respective iets =| “Formerly RCA Dev. Types Fy respectively. i ES Steneal| He (== = SSr| ia eres He = == SS i ES SS a or a a EFFECTIVE CAE TEUP ON CSE TOU. CTEFEOR TO" gece Fig. 1 - Derating curves for both types. (2N6032 ‘2N6033 * COLLECTOR-TO-BASE VOLTAGE, Vopo «..+ssssesererrsunerescererseenereeesees 120 160 v : COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: i With external base-to-emitter resistance (Ree)S50 02, Veen(SUS) «++ ---+++-eeeeeeer 110 140 v * With external base-to-emitter resistance (Rea<50 ne * EMITTER-TO-BASE VOLTAGE, Vaso... +-+ssserresresernneecersssenesesneess ees 7 7 v * CONTINUOUS COLLECTOR CURRENT, Io..-.+-+sseeeseenrerereseeeesseneeseee® 50. 40 A 1 * TRANSISTOR DISSIPATION, Pr: ‘At case temperatures up to 26°C and Vce above 24 V sa eeeeeeeneneaeeneeneceeeee ‘See Fig. 2 * TEMPERATURE RANGE: . * PIN TEMPERATURE (During Soldering): “in accordance with JEDEC registration data format (JS-6 RDF-1). 136 _ TTT

a1 DE pse7sce2 OO17135 § I

3875081 G E SOLID STATE O1E 17135 D T-33°|3

_ = nign-opeea rower Transistors ; 2N6032, 2N6033 | ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25°C Unless Otherwise Specified . TEST CONDITIONS [tims | oc pe | Emiter tye | Tyee ‘SYMBOL | Collector or Base ‘2N6032 +2N6033 Voltage (V) | Voltage (V) ven [vee |vew [oe [lc Pe [fx fn oe [im me | Gallector Cutoff Current: ‘intone ret fel [Feel (| iif * | With base-emitter 12 junction reverse biased Icev - were vie pee ee Pe | oe eet ep ted Do [Collector-to-Emitter . Sustaining Voltage: (Sea Figs. 12 & 13) Vceotsus) | With base open. With external baze to emitter Vv v . rn erate pow] —[~| = [~ Pelle fel= el | With base-emitter Fonetion reverse Woe tous) 1 biased & Rpg < 50% spcinnesnwoeevore [wore] = P=} =(=fel-e1- TET TG | | fewwsonwvoor | we t-te} =f -[el-T TT Ts To + [Coltectorso Eater 50 Vcelsat) v a ee ee jpoomvormenmn | we fe] =|=[B[E[E fale | | [Second-Breakdown Collector Current SBC see] - | ‘With base forward biased o09e og} - + | Nagnitode of commoneritier smallsignal, short-circuit, orward-curest transfer ratio (at 5 MHz) ommeamncoe | tft [fe [-[-fel fel = [oe | om centre wren} eam] | =] | | - [of -[ = [ool [om [or | | Saturated Switching Time: v Turn-On i (Delay Time + Rise Time) «| Rie Coe ele eT eTeEleT eT Teta fT | +| Fatt ty | Moc" 30V t | Thermal Resistance ‘ (Junction-to-Case) T CAUTION: The sustaining voltages Vee osu), Veen tus), end Vex (sus) MUST NOT be ‘measured on a curve tracer. » jgjp Is defined as the current at which second breakdown occurs at » specified collector voltage with the emitter-base junction forward {Sled for wansistr operation Inthe active region. © pulsed; 1-5, non-repetitive pulse. 1p1=!B2 “In, eccordance with JEDEC registration format JS-6 RDF-1. eS 137 | —_— '

3875081 G E SOLI ou

; Ds DE J3a7so8 2N6032, 2N6033 100,] case TEMP ei aged eee cintetemiiee MU See eeraigiuiiiuiiestarisiiiiiineststa “0 HE encean aun e a an oot uOUS!= 208033 ES au aa tH ESE ah CH Ny Stats iitialigeaeieniniit SSSEIEE: HSE errata oR SED ceeinhs ith HHP Recess eee «HE Es DS Ca Bis ei HE eT

9 SESE eH HH etre ENTE Et

O Esau HEE Retreats ¢ ibe eed He Rea at MUM Ra RMIILISEEEEH i CRTs EEE Eas SA ites EEE EHH EEE : & Raat acai AEE PAI IS. OTN Eu MEE HEEEE HE Ha EET TH : a itt i Hitt ; : Co | a E He a tag GEs cece THE LE: vega max sow Ne 2 te eg cents (2N6032) a Ee lee een a ae A ad oti bars Se HN a i 4 668 2 100 4 6 8, : COLLECTOR-TO-EMITTER VOLTAGE (Voce )—V ‘000 92CS-i6020RI Fig, 2 - Maximum operating area for both types. . 138 | = CTT

Oh De p3a7sos1 0017237 4 T

3875081 GE SOLID STATE 7 - -

et GE SOLID STATE OTE 118 nea tower hante, IS 2N6032, 2N6033 “OE Ie MAX, (CONTINUOUS }— 2NEO3S ial eeaaiitii Sess ati gb tee ear Meer {esses Teta tue t SHER EEETEtatE Esse ys gM SEE | Scset utd eniue eeu eteestn Be Hee Ee oT EST TTT nar rT HET REEEEHTE He f OSE ERT ERATE HE EH SSSSEsei ietecrnc arses Mad on RSM? Seca PSsUUISISWIN EULESS sass eoeeeerse n Pais = 2255 for Slee ne se a Peseta eta: ev tizeetrce | { See A ea a “Hisesreeis LEG HPSS hee | foe sce ets GOES ee sue é pee ree reed He eect \\. = ucusstinime pasta fet yeapniaisi bE tiiitminiessesttmeaeessets|

3 Hee SreGrern HUES eeaeeta :

OM sacs seca oer cess ew so sd Sass eiritliit BS ESERESEEDESESET| i ae eee EECA, OA Ee j ro} SE SEE bess sects tce sons soko ad sd seed ees ba Pees Pe iiss; sre uSeeessmeeea cee i Fam 55 asec eel cx neve meade cates eo PeUST TI EERSaTy ; Pig Sse Ee te ESPN el eg UES! : 8 “EEN CSL Seer EST SSA era Sd ett ae 6 a OW ESE TAN EEN rt | ee CE E I= Vcgo MAX.* 80V EAE uaatlle (2neos2) TRIN THT on EE vee MAX. « OV EEN eee "ceo : Cer | eames a a (2N6033) Set] i oe rt Er PEEP ES} 1 2 4 6 8 10 2 4 6 ® 00 2 COLLECTOR-TO-EMITTER VOLTAGE (Veg) —-V 92CS-I7445 Fig. 3 - Maximum operating areas for both types at case temperature (Tc) = 100°C. ! :

1 TT a

3875081 G E SOLID STATE O1E 1713 O - -

‘ High-Speed Power Jo state NE 171380 T*BBUI 3 2N6032, 2N6033 10] COLLECTOR To- EMITTER VOLTAGE (Wee-=80 [reTaom ESCLERTON SALT VOCATE Weg OY ; N eel ese UI] PNt eed a ect : EDULE Tl oS i ECCT TIN oe dll Pe sim SN) J —P . Fatt HH acrHt | Tr a — a . ECAC CIN beter Th LITTLE es Fig. 4 - Typical de-beta characteristics for both types. Fig. 5 - Hee saturated switching charac- teristics for both types. Iseeeteatustatsencazsatsecseestresseracs end ieunasutesfozasatatstatnatatitiases stetetacaatossa| ast o-ciret toute te — cou. Zero8-o-EuTTER WATE Neg=¥ Fig. 6 - Typical Input characteristics Fig. 7 - Typical collector characteristics for both types. for both types. Dm siisssteastesateestesssteatcestticsnseattony EQUIVALENT <= lon | 20008 aE Sie Pag sstutsteseestassatsntiiestaneatestieeesinitt| sag 378 ane E Se EEETEEESTaTaTotisraiye scene cotanatataezena REP. RATE® 400 He * : [A aaeEEEEeHaHTaeyet AP aEEEEEEE “oY oe ey 10) = Peseeetasietcaevacttca/cteeeanue ee Haee a me cee. ‘a Tp, AND Tg MEASURED WITH TEKTRONIX CURRENT Fig. 8 - Typical transfer characteristics Fig. 9 - Switching-time test set. | for both types. | tao