2N5565

2N5564 VISHAY

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Document Number: 70254 S-04031—Rev. D, 04-Jun-01 www.vishay.com 8-1 Matched N-Channel JFET Pairs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) /C0106VGS1 – VGS2 /C0106 Max (mV) 2N5564 –0.5 to –3 –40 7.5 –3 5 2N5565 –0.5 to –3 –40 7.5 –3 10 2N5566 –0.5 to –3 –40 7.5 –3 20 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Two-Chip Design /C0068High Slew Rate /C0068Low Offset/Drift Voltage /C0068Low Gate Leakage: 3 pA /C0068Low Noise: 12 nV⁄√Hz @ 10 Hz /C0068Good CMRR: 76 dB /C0068Minimum Parasitics /C0068Tight Differential Match vs. Current /C0068Improved Op Amp Speed, Settling Time Accuracy /C0068Minimum Input Error/Trimming Requirement /C0068Insignificant Signal Loss/Error Voltage /C0068High System Sensitivity /C0068Minimum Error with Large Input Signals /C0068Maximum High Frequency Performance /C0068Wideband Differential Amps /C0068High-Speed, Temp-Compensated, Single-Ended Input Amps /C0068High-Speed Comparators /C0068Impedance Converters /C0068Matched Switches /C0068/C0069/C0083/C0067/C0082/C0073/C0080/C0084/C0073/C0079/C0078 The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage (V (BR)DSS typically > 55 V), high gain (typically > 9 mS), and <5 mV offset between the two die. The hermetically-sealed TO-71 package is available with full military processing (see Military Information). For similar products see the low-noise U/SST401 series, and the low-leakage 2N5196/5197/5198/5199 data sheets. TO-71 Top View G 1 D 1 G 2 D 2 /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Notes a. Derate 2.6 mW//C0095C above 25/C0095C b. Derate 5.2 mW//C0095C above 25/C0095C

www.vishay.com 8-2 Document Number: 70254 S-04031— Rev. D, 04-Jun-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits 2N5564 2N5565 2N5566 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = –1 /C0109A, VDS = 0 V –55 –40 –40 –40 Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA –2 –0.5 –3 –0.5 –3 –0.5 –3 V Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 20 5 30 5 30 5 30 mA VGS = –20 V, VDS = 0 V –5 –100 –100 –100 pA Gate Reverse Current IGSS TA = 150/C0095C –10 –200 –200 –200 nA VDG = 15 V, ID = 2 mA –3 pA Gate Operating Currentc IG TA = 125/C0095C –1 nA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 50 100 100 100 /C0087 Gate-Source Voltagec VGS VDG = 15 V, ID = 2 mA –1.2 Gate-Source Forward Voltage VGS(F) IG = 2 mA , VDS = 0 V 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance gfs VDS = 15 V, ID = 2 mA Common-Source Output Conductance gos VDS = 15 V, ID = 2 mA f = 1 kHz 35 45 45 45 /C0109S Common-Source Forward Transconductance gfs VDS = 15 V, ID = 2 mA f = 100 MHz 8.5 7 7 7 mS Common-Source Input Capacitance C iss 10 12 12 12 Common-Source Reverse Transfer Capacitance C rss VDS = 15 V, ID = 2 mA f = 1 MHz 2.5 3 3 3 pF Equivalent Input Noise Voltage en VDS = 15 V, ID = 2 mA f = 10 Hz 12 50 50 50 nV⁄ √Hz Noise Figure NF R G = 10 M/C0087 1 1 1 dB Matching Differential Gate-Source Voltage |V GS1 –V GS2 | VDG = 15 V, ID = 2 mA 5 10 20 mV Gate-Source Voltage Differential Change with Temperature /C0068|V GS1 –V GS2 | /C0068T VDG = 15 V, ID = 2 mA TA = –55 to 125/C0095C 10 25 50 /C0109V/ /C0095C Saturation Drain Current Ratioc IDSS1 IDSS2 VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.95 1 0.95 1 Transconductance Ratio gfs1 gfs2 VDS = 15 V, ID = 2 mA f = 1 kHz 0.98 0.95 1 0.90 1 0.90 1 Common Mode Rejection Ratio c CMRR VDG = 10 to 20 V ID = 2 mA 76 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCBD b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%. c. This parameter not registered with JEDEC.

Document Number: 70254 S-04031— Rev. D, 04-Jun-01 www.vishay.com 8-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current 100 0 –10 200 160 rDS IDSS rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 15 V, VGS = 0 100 1 10 100 VGS(off) = –2 V TA = 25/C0095C VGS(off) – Gate-Source Cutoff Voltage (V) I D – Drain Current (mA) –2 –4 –6 –8 120 Turn-On Switching 0 –10 tr Switching Time (ns) td(on) @ ID = 3 mA td(on) @ ID = 12 mA tr approximately independent of ID VDG = 5 V, RG = 50 /C0087 VGS(L) = –10 V VGS(off) – Gate-Source Cutoff Voltage (V) –2 –4 –6 –8 Turn-Off Switching 01 0 VGS(off) = –2 V td(off) td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = –10 V ID – Drain Current (mA) 24 68 Switching Time (ns) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage –2 –10 500 200 gfs– Forward Transconductance (mS) gfs gos gfs and gos @ VDS = 15 V VGS = 0 V, f = 1 kHz VGS(off) – Gate-Source Cutoff Voltage (V) –4 –6 –8 400 200 100 160 120 On-Resistance vs. Temperature 200 –55 25 125 –15 85 ID = 1 mA rDS changes 0.7%//C0095C VGS(off) = –2 V TA – Temperature (/C0095C) –35 5 45 65 105 tf rDS(on) – Drain-Source On-Resistance ( )/C0087 rDS(on) – Drain-Source On-Resistance ( )/C0087 rDS(on) – Drain-Source On-Resistance ( )/C0087 – Saturation Drain Current (mA)IDSSS) gos– Output Conductance (/C0109

www.vishay.com 8-4 Document Number: 70254 S-04031— Rev. D, 04-Jun-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 VDS = 15 V – Drain Current (mA)ID VGS – Gate-Source Voltage (V) TA = –55/C0095C 25/C0095C 125/C0095C Transfer Characteristics 0 4 8 12 16 20 Output Characteristics VDS – Drain-Source Voltage (V) – Drain Current (mA)ID VGS(off) = –1.5 V VGS = 0 V –0.1 V –0.2 V –0.3 V –0.4 V –0.5 V –0.6 V –0.7 V Output Characteristics VDS – Drain-Source Voltage (V) – Drain Current (mA)ID 01 0.80.60.40.2 VGS(off) = –1.5 V –0.2 V –0.3 V –0.4 V –0.5 V –0.6 V –0.7 V –0.8 V –0.9 V Capacitance vs. Gate-Source Voltage –20 Capacitance (pF) f = 1 MHz VDS = 0 V C iss C rss VGS – Gate-Source Voltage (V) –4 –8 –12 –16 Gate Leakage Current 03 0 – Gate LeakageIG TA = 125/C0095C TA = 25/C0095C 1 mA IGSS @ 25/C0095C ID = 10 mA Common-Gate Input Admittance 100 0.1 100 1000 200 500 (mS) gig big VDG = 15 V ID = 10 mA TA = 25/C0095C VDG – Drain-Gate Voltage (V) f – Frequency (MHz) IGSS @ 25/C0095C 10 mA 1 mA 6 1 21 82 4 IG(on) @ ID 0.1 pA 1 pA 10 pA 100 pA 1 nA 10 nA –0.1 V VGS(off) = –2 V VGS = 0 V

Document Number: 70254 S-04031— Rev. D, 04-Jun-01 www.vishay.com 8-5 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 0.1 100 1000 200 500 (mS) –gfg bfg gfg VDG = 15 V ID = 10 mA TA = 25/C0095C 0.1 0.01 100 1000 200 500 VDG = 15 V ID = 10 mA TA = 25/C0095C –grg –brg +grg (mS) f – Frequency (MHz) f – Frequency (MHz) Common-Gate Output Admittance 100 0.1 100 1000 200 500 (mS) VDG = 15 V ID = 10 mA TA = 25/C0095C gog bog f – Frequency (MHz) Noise Voltage vs. Frequency 100 10 100 1 k 100 k 10 k ID = 1 mA ID = 10 mA VDS = 15 V f – Frequency (Hz) Transconductance vs. Drain Current 100 0.1 1.0 10 ID – Drain Current (mA) TA = –55/C0095C 25/C0095C 125/C0095C Output Conductance vs. Drain Current 1000 100 0.1 1.0 10 ID – Drain Current (mA) TA = –55/C0095C 25/C0095C 125/C0095C VDS = 15 V f = 1 kHz VGS(off) = –2 V VDS = 15 V f = 1 kHz VGS(off) = –2 V en – Noise Voltage nV / Hz gos – Output Conductance (µS) gfs – Forward Transconductance (mS)