2N5550S FS
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SOT–23 High Voltage Transistors MAXIMUM RATINGS CEO 140 Vdc CBO 160 Vdc EBO 6.0 Vdc C 600 mAdc THERMAL CHARACTERISTICS Total Device Dissipation FR– 5 Board, (1) P D 225 T A = 25°C Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient θ JA 556 Total Device Dissipation P D 300 Alumina Substrate, (2) T A = 25°C Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient θ JA 417 Junction and Storage Temperature J , T stg –55 to +150 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (BR)CEO Vdc (I C = 1.0 mAdc, I B =0) 2N5551S Collector–Base Breakdown Voltage (BR)CBO Vdc (I C = 100 µ Adc, I E =0) 2N5551S Emitter–Base Breakdown Voltage (BR)EBO Vdc (I E = 10 µ Adc, I C = 0) Collector Cutoff Current CBO ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A =100 °C) µ Adc ( V CB = 120Vdc, I E = 0, T A =100 °C) Emitter Cutoff Current I EBO ( V BE = 4.0Vdc, I C = 0) 3. Pulse Test: Pulse Width = 300 µ s, Duty Cycle = 2.0%. EMITTER COLLECTOR BASE FEATURE Pb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION 2N5550S F0 3000/Tape&Reel 2N5551S F1 3000/Tape&Reel 2011. 01. 12 1/5 SEMICONDUCT OR TECHNICAL DATA 2N5550S 2N5551S Revision No : 2 Collector–Emitter Voltage Collector–Base Voltage mitter–Base Voltage Collector Current — Continuous V V V I Device Marking Shipping Rating Symbol Value Unit Characteristic Symbol Max Unit Characteristic Symbol Max Unit Min 1.8 mW R R T °C/W °C/W mW 2.4 2N5550S 2N5550S 2N5551S 2N5550S 2N5551S 2N5550S I V V V 140 160 160 160 6.0 100 100 nAdc nAdc 50
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain FE –– (I C = 1.0 mAdc, V CE = 5.0 Vdc) 2N5551S (I C = 10 mAdc, V CE = 5.0 Vdc) 2N5551S (I C = 50 mAdc, V CE = 5.0Vdc) 2N5551S Collector–Emitter Saturation Voltage CE(sat) Vdc (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) 2N5551S Base–Emitter Saturation Voltage BE(sat) Vdc (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) 2N5551S 2011. 01. 12 2/5 2N5550S 2N5551S Revision No : 2 2N5550S 2N5550S 2N5550S 2N5550S 2N5550S Both Types Both Types h V V 250 250 0.15 0.20 0.25 1.0 1.0 1.2
L A C B S H G V 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.031 0.8 SOT-23 2011. 01. 12 5/5 2N5550S 2N5551S Revision No : 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L S V 0.1102 0.1197 2.80 3.04 0.0472 0.0551 1.20 1.40 0.0350 0.0440 0.89 1.11 0.0150 0.0200 0.37 0.50 0.0701 0.0807 1.78 2.04 0.0005 0.0040 0.013 0.100 0.0034 0.0070 0.085 0.177 0.0140 0.0285 0.35 0.69 0.0350 0.0401 0.89 1.02 0.0830 0.1039 2.10 2.64 0.0177 0.0236 0.45 0.60