2N5551S_99 KEC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
- 11. 30 1/2 SEMICONDUCTOR TECHNICAL DATA 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 DIM MILLIMETERS 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55
0.20 MIN
1.00+0.20/-0.10 M J K E 2 3 H G A N C B D 1.30 MAX LL PP CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Base Current IB 100 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 0.6 ) Type Name Marking Lot No. ZF
- 11. 30 2/2Revision No : 2 ELECTRICAL CHARACTERISTICS (Ta=25 2N5551S * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 50 nA VCB=120V, IE=0, Ta=100 - - 50 A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 180 - - V Collector-Emitter * Breakdown Voltage V(BR)CEO IC=1mA, IB=0 160 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V DC Current Gain * hFE(1) VCE=5V, IC=1mA 80 - - hFE(2) VCE=5V, IC=10mA 80 - 250 hFE(3) VCE=5V, IC=50mA 30 - - Collector-Emitter * Saturation Voltage VCE(sat)1 IC=10mA, IB=1mA - - 0.15 V VCE(sat)2 IC=50mA, IB=5mA - - 0.2 Base-Emitter * Saturation Voltage VBE(sat)1 IC=10mA, IB=1mA - - 1.0 V VBE(sat)2 IC=50mA, IB=5mA - - 1.0 Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 - 300 MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200 Noise Figure NF VCE=5V, IC=250 A Rg=1k , f=10Hz 15.7kHz - - 8 dB