2N5515 INTERSIL
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G E SOLID STATE 0% pe ff 3e750a1 oo11004 4 & T-27-27 j 2N5515~2N5524 SINTERSIL » Dual N-Channel JFET % Low Noise Amplifier & FEATURES ABSOLUTE MAXIMUM RATINGS . 32 « Tight Temperature Tracking (Ta=25°C unless otherwise specified) One Side Both Sides Power Dissipation (Tq=85°C) _250mW —_375mW NOTE: Pe transistor. NOTE: Svesses above those fisted under “Absolute Maximum Ratings" Inay cause parmanont damage to he dove. These ae sess ratings only {nd functonal operaton of te dave at theso or ary ober conadons ‘tove thee nated inthe operon! sections of tha speciicabos snot Inotod. Exposure fo absolut axinum rating condions for xtorded pe- (ods may affect dovic rotebilty. «fo, ORDERING INFORMATION Cord 6037-2NS515-1 6019-2N5520-24 [ans516 | ELECTRICAL CHARACTERISTICS (1, = 25°C unless otherwise specified) [Symbor | Parameter Test Conditions [win] tax _[ units ] Gate Reverse Current Vas= —30V, Vos=0 |_| -260 [pa _| Gate-Source Breakdown Voltage [io==twAvos=o | ao | Gate-SourcePinch-Oft Voliage [Vos=20v.ip=ira | 07 | a | Drain Current at Zero Gate Voltage (Note 1) | Vos=20V,Ves=0 | | 08 | 7.5 | mA | ‘Common-Source Forward Transconductance f= tkHz 5 (Note 1) fr | sos | ‘Common-Source Output Conductance [fo | iss | Common-Source Reverse Transfer 1=1MHz 7 Capacitance (Note 3) , Common-Source Input Capacitance (Note 3) [Ts | + NTERSWS SOLE AND EXCLUSIE WARRANTY OSUGATION WT RESPECT TO THs PRODUCT SHALL BE THAT STATED IN THE WARRANTY ARTICLE OF THE CONOMION OF SALE. SHE WARRANTY QULL BE EXELURNVE AND SPALL BE ILE OF ALL OTVER WARRANTIES, OAESS, FLIED OA STATUTORY, NCLUDNG THE WPLED WAARANTIS OF MEROIMNTABLITY AND FITNESS FOR A PARTIR USE OTE AI ypc! aes ave ben chard et 9 tt 10-52
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ELECTRICAL CHARACTERISTICS (Continued) (Ta = 26°C unless otherwise specified) e [Symbor[arameter_———=—« Tent Gonctiona win [wax [units | Equivalent Input Noise Voltage | 2N5515-19 | | [_s0 | rd (Note) [enes20-2« | [ [ois | ave | B Gate Current Voa=20V,ip=200na| || -100 | pa_| [ta z50[ | -t00[ na_| | Vas | Gate Source Voltage [| -o2 | -sa |v | Common-Source Forward ‘Transconductance (Note 1) Loess | Common-source Output Conductance | ee ee MATCHING CHARACTERISTICS | (Ty = 25°C unless otherwise specified) Co en ona ae [win [ex tan [ Mx tna [Max] tn [tox mia [ Max jossi/iosse [Drain CurentRatioatZerojvps=20v, [0.5] 1 [oos] 1 [oss] + [oss] 1 [ooo 1 | | eaovernmoow osme TTT t t [Differential Gate Current |Vpg= 20V, 0 \\(+126°C) l>=200.A bis1/o1s2 ransconductance Ratio Vpg=20v, |0.97| 1 [oe7| 1 |oos| 1 [095] 1 [oso| 1 | \\(Note 1) lip= 200nA = 1kH2 |Goss1 - Goss2! [Differential Output Ina = 20V, ‘onductance l= 200nA Bs = kHz |\\Vas1 - Vasel [Differential Gate-Source |Vpg=20V, mv foltago l= 2004A AlVasi - Vase ||Gate-Source Voltage [p= 20V, Vv aT Differential Drift lip=200nA 10 bd \\(Ta= —55°C to +125°C) Common Mode Rejection |Vpp= 10 to 20V, | [Ratio (Note 2, 3) l= 2004A NOTES: 1. Pulse duration of 26ms used during tot 2. CMR = 20 logiaAVo0/AiVasy~ Vasal (AVo0 = 10¥) 3. For design reference only, not 100% tested. {NTERSI'S SOLE AND EXCLUSIVE WARRANTY OBLIGATION WTH RESPECT TO THIS PRODUCT SHALL GE THAT STATED IN THE WARRANTY ARTICLE OF THE CONDITION OF SALE SMe WARFUOIY SHALL BE EXCLUSIVE ANO SHALL BE IN LIU OF ALL OTMER WARRANTIES, EXPRESS, IMPLIED OR STATUTORY, INCLUDING THE MPLED WARRANTIES OF EROHANTADIITY AND FITNESS FOR A PAATICNAR USE oa NOTE: As pea vats hae bean caractnzd ut oro eta 10-53