2N5484 FAIRCHILD

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2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C G S D TO-92 SOT-23 Mark: 6B / 6M / 6H G S D *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5484 *MMBF5484 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 125 °C/W R θJA Thermal Resistance, Junction to Ambient 357 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test C onditions Min Typ Max Units ON CHARACTERISTICS V(BR )GSS Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 25 V IGSS Gate Reverse Current V GS = - 20 V, VDS = 0 VGS = - 20 V, VDS = 0, TA = 100°C - 1.0 - 0.2 nA µA VGS (off) Gate-Source Cutoff Voltage V DS = 15 V, ID = 10 nA 2N5484 2N5485 2N5486 - 0.3 - 0.5 - 2.0 - 3.0 - 4.0 - 6.0 V V V IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5484 2N5485 2N5486 1.0 4.0 8.0 5.0 mA mA mA SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance V DS = 15, VGS = 0, f = 1.0 kHz 2N5484 2N5485 2N5486 3000 3500 4000 6000 7000 8000 µmhos µmhos µmhos Re(yis) Input Conductance V DS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 / 2N5486 100 1000 µmhos µmhos gos Output Conductance V DS = 15, VGS = 0, f = 1.0 kHz 2N5484 2N5485 2N5486 µmhos µmhos µmhos Re(yos) Output Conductance V DS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 / 2N5486 100 µmhos µmhos Re(yfs) Forward Transconductance V DS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 2N5486 2500 3000 3500 µmhos µmhos µmhos C iss Input Capacitance V DS = 15, VGS = 0, f = 1.0 MHz 5.0 pF C rss Reverse Transfer Capacitance V DS = 15, VGS = 0, f = 1.0 MHz 1.0 pF C oss Output Capacitance V DS = 15, VGS = 0, f = 1.0 MHz 2.0 pF NF Noise Figure VDS = 15 V, RG = 1.0 kΩ , f = 100 MHz 2N5484 VDS = 15 V, RG = 1.0 kΩ , f = 400 MHz 2N5484 VDS = 15 V , RG = 1.0 kΩ , f = 100 MHz 2N5485 / 2N5486 VDS = 15 V, RG = 1.0 kΩ , f = 400 MHz 2N5485 / 2N5486 4.0 3.0 2.0 4.0 dB dB dB dB *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2% N-Channel RF Amplifier (continued)

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 Typical Characteristics °°°°° Transfer Characteristics -5-4-3-2-10 V - GATE-SOURCE VOLTAGE(V) I - DRAIN CURRENT (mA)D GS(OFF)V = -4.5V V = 15VDS T = +25 CA O -2.5 V T = -55 C O A T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O GS Channel Resistance vs Temperature -50 0 50 100 150 100 200 300 500 1000 T - AMBIENT TEMPERATURE ( C) r - DRAIN ON RESISTANCE ( ) Ω V = -1.0VGS(OFF) -2.5 V -5.0V -8.0 V V = 100mVDS V = 0 VGS DS A Transconductance Characteristics -5-4-3-2-10 V - GATE-SOURCE VOLTAGE(V) gfs -- TRANSCONDUCTANCE (mmhos) V = -4.5VGS(OFF) V = 15VDS T = +25 CA O -2.5 V T = -55 C O A T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O GS Common Drain-Source Characteristics 0 0.2 0.4 0.6 0.8 1 V - DRAIN-SOURCE VOLTAGE(V) I -- DRAIN CURRENT (mA) V = 0VGS -2.5V DS -0.5V -4.0V -2.0V -1.0V -3.5V -3.0V -1.5V T = +25 CA O TYP V = -5.0VGS(OFF) D Transconductance Parameter Interactions 12 3 5 7 1 0 100 V - GATE-SOURCE VOLTAGE(V) r -- DRAIN "ON" RESISTANCE ( ) gfs --- TRANSCONDUCTANCE ( mmhos ) GS I -- DRAIN CURRENT ( mA )DSS DS Ω gfs, I @ V = 15 V, V = 0 PULSEGSDSDSS r @ V = 100mV, V = 0GSDSDS V @ V = 15V, I = 1nAGS(OFF) GS D - ----- Output Conductance vs Drain Current 0.1 0.5 I -- DRAIN CURRENT (mA) gos -- OUTPUT CONDUCTANCE (u mhos) D 1510 T = +25 CA O f = 1.0 kHz 15V 10V 5.0V 20V V = 5v DG V = -5.5VGS(OFF) V = -3.5VGS(OFF) V = -1.5VGS(OFF) N-Channel RF Amplifier (continued)

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW)D o Transconductance vs Drain Current 0.1 0.5 I - DRAIN CURRENT (mA) gfs -- TRANSCONDUCTANCE (mmhos) D GSV = - 5VGS(OFF) GSV = - 1.5VGS(OFF) T = -55 C O A T = +25 CA O T = +125 CA O T = -55 C O A T = +25 CA O T = +125 CA O V = 15V f = 1.0 kHz DG Noise Voltage vs Frequency 0.01 0.03 0.1 0.3 1 3 10 30 100 f -- FREQUENCY (kHz) e - NOISE VOLTAGE ( nV/ Hz ) V = 15VDG BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz I = 0.5 mAD I = 3 mADn Capacitance vs Voltage -20-15-10-50 V -- GATE-SOURCE VOLTAGE(V) C ( C ) -- CAPACITANCE (pF) GS is rs C ( V = 0 V) C ( V = 15 V)C ( V = 15 V)DS DS is rs f = 0.1 - 1.0 MHz Noise Figure Frequency 10 20 30 50 100 200 300 500 1000 f -- FREQUENCY (MHz) NF -- NOISE FIGURE (dB) V = 15VDS I = 5.0 mA R = 1.0 k T = +25 CA O Ω D g N-Channel RF Amplifier (continued) SOT-23 TO-92 Typical Characteristics (continued)

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 Common Source Characteristics Input Admittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- INPUT ADMITTANCE (mmhos) V = 15V V = 0GS DS (CS) g iss iss b iss Output Admittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- OUTPUT CONDUCTANCE (mmhos) V = 15V V = 0GS DS (CS) OSS b (x 10)OSS g OSS Forward Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- FORWARD TRANSFER (mmhos) V = 15V V = 0GS DS (CS) -bfss fss +g fss Reverse Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- REVERSE TRANSFER (mmhos)rss V = 15V V = 0GS DS (CS) - b -g ( X 0.1)rss rss N-Channel RF Amplifier (continued)

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 Common Gate Characteristics N-Channel RF Amplifier (continued) Input Admittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- INPUT ADMITTANCE (mmhos) V = 15V V = 0GS DS (CG) g igs igs b igs Forward Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- FORWARD TRANSFER (mmhos) V = 15V V = 0GS DS (CG) -bfgs fgs +g fgs Reverse Transadmittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- REVERSE TRANSFER (mmhos)rgs V = 15V V = 0GS DS (CG) g rgs - brgs Output Admittance 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Y -- OUTPUT CONDUCTANCE (mmhos) V = 15V V = 0GS DS (CG) ogs b (x 10)OgS g Ogs

ACEx™ CoolFET™ CROSSVO LT™ E 2CMOS TM FACT™ FACT Quiet Series™ FAST ® FAS Tr™ G TO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPO RT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPRO VAL OF FAIRCHILD SEMICONDUC TOR CORPOR ATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT S TATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT Y, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.