2N5486

2N5484_07 VISHAY

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Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 −0.3 to −3 −25 3 1 2N/SST5485 −0.5 to −4 −25 3.5 4 2N/SST5486 −2 to −6 −25 4 8 FEATURES BENEFITS APPLICATIONS /C0068Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz − 5485/6 /C0068Very Low Noise: 2.5 dB (typ) @

400 MHz − 5485/6

/C0068Very Low Distortion /C0068High AC/DC Switch Off-Isolation /C0068Wideband High Gain /C0068Very High System Sensitivity /C0068High Quality of Amplification /C0068High-Speed Switching Capability /C0068High Low-Level Signal Amplification /C0068High-Frequency Amplifier/Mixer /C0068Oscillator /C0068Sample-and-Hold /C0068Very Low Capacitance Switches

DESCRIPTION

The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). D S G TO-236 (SOT-23 Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 D S G TO-226AA (TO-92) Top View 2N5484 2N5485 2N5486 For applications information see AN102 and AN105.

www.vishay.com Document Number: 70246 S-50148—Rev. G, 24-Jan-05 ABSOLUTE MAXIMUM RATINGS Notes a. Derate 2.8 mW/ /C0095C above 25/C0095C SPECIFICATIONS FOR 2N SERIES (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits 2N5484 2N5485 2N5486 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 /C0109A , VDS = 0 V −35 −25 −25 −25 V Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6 V Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA Gate Reverse Current IGSS VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1 nAGate Reverse Current IGSS TA = 100/C0095C −0.2 −200 −200 −200 nA Gate Operating Currentc IG VDG = 10 V, ID = 1 mA −20 pA Gate-Source Forward Voltagec VGS(F) IG = 10 mA , VDS = 0 V 0.8 V Dynamic Common-Source Forward Transconductance NO TAG gfs VDS = 15 V, VGS = 0 V 3 6 3.5 7 4 8 mS Common-Source Output ConductanceNO TAG gos VDS = 15 V, VGS = 0 V f = 1 kHz 50 60 75 /C0109S Common-Source Input Capacitance Ciss 2.2 5 5 5 Common-Source Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V f = 1 MHz 0.7 1 1 1 pF Common-Source Output Capacitance Coss 1 2 2 2 Equivalent Input Noise Voltage c en VDS = 15 V, VGS = 0 V f = 100 Hz 10 nV⁄ √Hz High-Frequency Common-Source d Yf( R E ) f = 100 MHz 5.5 2.5 mSCommon-Source Transconductanced Yfs(RE) f = 400 MHz 5.5 3 3.5 mS Common-Source d Y (RE) VDS = 15 V f = 100 MHz 45 75 /C0109SCommon-Source Output Conductanced Yos(RE) VDS = 15 V VGS = 0 V f = 400 MHz 65 100 100 /C0109S Common-Source d Yi( R E ) f = 100 MHz 0.05 0.1 mSCommon-Source Input Conductanced Yis(RE) f = 400 MHz 0.8 1 1 mS CS P G i d G VDS = 15 V, ID = 1 mA f = 100 MHz 20 16 25 Common-Source Power Gaind Gps VDS = 15 V f = 100 MHz 21 18 30 18 30VDS = 15 V ID = 4 mA f = 400 MHz 13 10 20 10 20 VDS = 15 V, VGS = 0 V RG = 1 M/C0087 , f = 1 kHz 0.3 2.5 2.5 2.5 dB Noise Figured NF VDS = 15 V, ID = 1 mA RG = 1 k/C0087 , f = 100 MHz 2 3g VDS = 15 V ID = 4 mA f = 100 MHz 1 2 2 ID = 4 mA RG = 1 k/C0087 f = 400 MHz 2.5 4 4

Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com SPECIFICATIONS FOR SST SERIES (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits SST5484 SST5485 SST5486 Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 /C0109A , VDS = 0 V −35 −25 −25 −25 V Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6 V Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA Gate Reverse Current IGSS VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1 nAGate Reverse Current IGSS TA = 100/C0095C −0.2 −200 −200 −200 nA Gate Operating Currentc IG VDG = 10 V, ID = 1 mA −20 pA Gate-Source Forward Voltagec VGS(F) IG = 10 mA , VDS = 0 V 0.8 V Dynamic Common-Source Forward Transconductance NO TAG gfs VDS = 15 V, VGS = 0 V 3 6 3.5 7 4 8 mS Common-Source Output ConductanceNO TAG gos VDS = 15 V, VGS = 0 V f = 1 kHz 50 60 75 /C0109S Common-Source Input Capacitance Ciss 2.2 Common-Source Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V f = 1 MHz 0.7 pF Common-Source Output Capacitance Coss 1 Equivalent Input Noise Voltage c en VDS = 15 V, VGS = 0 V f = 100 Hz 10 nV⁄ √Hz High-Frequency Common-Source Yf f = 100 MHz 5.5 mSCommon-Source Transconductance Yfs f = 400 MHz 5.5 mS Common-Source Y VDS = 15 V f = 100 MHz 45 /C0109SCommon-Source Output Conductance Yos VDS = 15 V VGS = 0 V f = 400 MHz 65 /C0109S Common-Source Yi f = 100 MHz 0.05 mSCommon-Source Input Conductance Yis f = 400 MHz 0.8 mS Common-Source G VDS = 15 V, ID = 1 mA f = 100 MHz 20 Common-Source Power Gain Gps VDS = 15 V f = 100 MHz 21VDS = 15 V ID = 4 mA f = 400 MHz 13 VDS = 15 V, VGS = 0 V RG = 1 M/C0087 , f = 1 kHz 0.3 dB Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 k/C0087 , f = 100 MHz 2g VDS = 15 V ID = 4 mA f = 100 MHz 1 ID = 4 mA RG = 1 k/C0087 f = 400 MHz 2.5 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%. c. This parameter not registered with JEDEC. d. Not a production test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 70246 S-50148—Rev. G, 24-Jan-05 TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage rDS gos rDS @ ID = 300 /C0109A, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS gfs IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz VGS(off) − Gate-Source Cutoff Voltage (V) VDG − Drain-Gate Voltage (V) I D − Drain Current (mA) VDS − Drain-Source Voltage (V) V DS − Drain-Source Voltage (V) Gate Leakage Current 0.1 mA IGSS @ 25/C0095C TA = 25/C0095C TA = 125/C0095C IGSS @ 125/C0095C Output Characteristics Output Characteristics Common-Source Forward Transconductance vs. Drain Current 0.1 1 10 VGS(off) = −3 V TA = −55/C0095C 25/C0095C 125/C0095C −0.2 V −0.4 V −0.6 V −0.8 V −1.2 V −1.0 V VGS = 0 V −0.6 V −0.9 V −1.2 V −1.5 V −1.8 V VGS = 0 V −0.3 V 100 500 400 300 200 100 01 2 841 6 2 0 0.1 pA 1 pA 10 pA 100 pA 1 nA 10 nA 100 nA 01 0 24 68 01 0 24 68 VGS(off) − Gate-Source Cutoff Voltage (V) VDS = 10 V f = 1 kHz VGS(off) = −2 V VGS(off) = −3 V ID = 5 mA 1 mA 0.1 mA ID = 5 mA 1 mA −1.4 V gos − Output Conductance (µS) rDS(on) − Drain-Source On-Resistance ( Ω ) gfs − Forward Transconductance (mS) IDSS − Saturation Drain Current (mA) gfs − Forward Transconductance (mS) IG − Gate LeakageID − Drain Current (mA) ID − Drain Current (mA)

Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) Transfer Characteristics VGS(off) = −2 V TA = −55/C0095C 125/C0095C Transfer Characteristics TA = −55/C0095C 125/C0095C VGS(off) = −3 V 25/C0095C VGS − Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage VGS(off) = −2 V TA = −55/C0095C 125/C0095C 25/C0095C VGS − Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage TA = −55/C0095C 125/C0095C 25/C0095C VGS(off) = −3 V ID − Drain Current (mA) I D − Drain Current (mA) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 0.1 1 10 TA = 25/C0095C −3 V VGS(off) = −2 V 100.1 AV /C0043 gfs RL 1 /C0041RLgos Assume VDD = 15 V, VDS = 5 V RL /C0043 10 V ID VGS(off) = −2 V −3 V 300 240 180 120 100 VDS = 10 V VDS = 10 V VDS = 10 V f = 1 kHz VDS = 10 V f = 1 kHz 25/C0095C rDS(on) − Drain-Source On-Resistance ( Ω ) gfs − Forward Transconductance (mS) gfs − Forward Transconductance (mS) ID − Drain Current (mA) ID − Drain Current (mA)AV − Voltage Gain

www.vishay.com Document Number: 70246 S-50148—Rev. G, 24-Jan-05 TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz VDS = 0 V 10 V VDS = 0 V 10 V VGS − Gate-Source Voltage (V) V GS − Gate-Source Voltage (V) f = 1 MHz Reverse Admittance Output Admittance Input Admittance Forward Admittance 100 0.1 100 1000 bis gis TA = 25/C0095C VDS = 15 V VGS = 0 V Common Source (mS) 100 0.1 100 1000 TA = 25/C0095C VDS = 15 V VGS = 0 V Common Source (mS) −bfs gfs 0.1 0.01 100 1000 (mS) TA = 25/C0095C VDS = 15 V VGS = 0 V Common Source −brs −grs 0.1 0.01 100 1000 TA = 25/C0095C VDS = 15 V VGS = 0 V Common Source bos gos (mS) f − Frequency (MHz) f − Frequency (MHz) f − Frequency (MHz)f − Frequency (MHz) 2.4 1.8 1.2 0.6 200 500 200 500 200 500 200 500 Ciss − Input Capacitance (pF) Crss − Reverse Feedback Capacitance (pF)

Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 10 100 k 10 k ID = 5 mA VDS = 10 V 0.1 1 10 TA = −55/C0095C 125/C0095C VGS(off) = −3 V ID − Drain Current (mA)f − Frequency (Hz) ID = IDSS VDS = 10 V f = 1 kHz 100 1 k VGS(off) = −3 V 25/C0095C en − Noise Voltage nV / Hz gos − Output Conductance (µS) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For relate d documents such as pa ckage/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70246.

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.