Download PDF2N5461 INTERFET
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2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25¡C Reverse Gate Source & Reverse Gate Drain Voltage 40 V Continuous Forward Gate Current – 10 mA Continuous Device Power Dissipation 310 mW Power Derating 2.8 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
SMP5460, SMP5461, SMP5462 At 25°C free air temperature: 2N5460 2N5461 2N5462 Process PJ32 Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 40 40 40 V I G = 10µA, VDS = ØV Gate Reverse Current I GSS 555 n A V GS = 20V, VDS = ØV 111 µ A V GS = 20V, VDS = ØV T A = 100°C Gate Source Cutoff Voltage V GS(OFF) 0.75 6 1 7.5 1.8 9 V V DS = – 15V, ID = – 1 µA 0.8 4.5 V V DS = – 15V, ID = – 100 µA Gate Source Voltage V GS 0.8 4.5 V V DS = – 15V, ID = – 200 µA 1.5 6 V V DS = – 15V, ID = – 400 µA Drain Saturation Current (Pulsed) I DSS – 1– 5– 2– 9– 4 – 1 6 m A V DS = – 15V, VGS = ØV Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 2 0.8 0.4 k Ω VGS = ØV, I D = Ø A f = 1 kHz Common Source Forward Transadmittance |Y fs | 1 4 1.5 5 2 6 mS V DS = – 15V, VGS = Ø V f = 1 kHz Common Source Output Admittance | Y os | 7 57 57 5 µ S V DS = – 15V, VGS = Ø V f = 1 kHz Common Source Input Capacitance C iss 777 p F V DS = – 15V, VGS = ØV f = 1 MHz Common Source Reverse Crss 222 p F V DS = – 15V, VGS = ØV f = 1 MHzTransfer Capacitance Equivalent Short Circuit ¯eN 2.5 2.5 2.5 dB V DS = – 15V, VGS = ØV f = 100 Hz, Input Noise Voltage BW = 1 Hz Noise Figure NF 115 115 115 nV/√Hz VDS = – 15V, VGS = ØV, f = 100 HzRG = 1MΩ ¥ Audio Amplifiers ¥ General Purpose Amplifiers 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-21