2N5460 FAIRCHILD

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G D S 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 MMBF5462 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage - 40 V VGS Gate-Source Voltage 40 V IGF Forward Gate Current 10 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units 2N5460-5462 *MMBF5460-5462 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W G S D TO-92 SOT-23 Mark: 6E / 61U / 61V *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  2001 Fairchild Semiconductor Corporation NOTE: Source & Drain are interchangeable 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 2N5460/5461/5462/MMBF5460/5461/5462, Rev A

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units V(BR)GSS Gate-Source Breakdown Voltage IG = 10 µA, VDS = 0 40 V IGSS Gate Reverse Current VGS = 20 V, VDS = 0 VGS = 20 V, VDS = 0, TA = 100°C 5.0 1.0 nA µA VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 1.0 µA 5460 5461 5462 0.75 1.0 1.8 6.0 7.5 9.0 V V V VGS Gate-Source Voltage VDS = 15 V, ID = 0.1 mA 5460 VDS = 15 V, ID = 0.2 mA 5461 VDS = 15 V, ID = 0.4 mA 5462 0.5 0.8 1.5 4.0 4.5 6.0 V V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5460 5461 5462 - 1.0 - 2.0 - 4.0 - 5.0 - 9.0 - 16 mA mA mA SMALL SIGNAL CHARACTERISTICS nV/√ Hz gfs Forward Transfer Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz 5460 5461 5462 1000 1500 2000 4000 5000 6000 µ mhos µmhos µmhos gos Output Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz 75 µmhos Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 5.0 7.0 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 1.0 2.0 pF NF Noise Figure VDS = 15 V, VGS = 0, RG = 1.0 megohm, f = 100 Hz, BW = 1.0 Hz 1.0 2.5 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 15 V, VGS = 0, f = 100 Hz, BW = 1.0 Hz 60 115 *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% P-Channel General Purpose Amplifier (continued) 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

Typical Characteristics (continued) Channel Resistance vs. TemperatureLeakage Current vs. Voltage Transfer Charactersitics Common Drain-Source Transfer Characteristics P-Channel General Purpose Amplifier (continued) Parameter Interactions 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

Typical Characteristics (continued) Noise Voltage vs. Frequency Capacitance vs. Voltage Output Conductance vs. Drain Current Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW) º D SOT-23 TO-92 P-Channel General Purpose Amplifier (continued) 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462

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