2N5461

2N5460 NJSEMI

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Technical content

Neu TAY Semi-Conductor Products, Inc. : TELEPHONE: (201) 376-2 20 STERN AVE. (212) 227-6 SPRINGFIELD, NEW JERSEY 07081 2N5460 FAX: (201) 3768 U.S.A. ; thru MAXIMUM RATINGS 2N 2 [ Drsincate vonage | Vg | a0 | vee | | Reverse Gate-Source Votage | _Vasa_| 40 | vee _| Total Device Dissipation @ Ta = 25°C mw Derate above 25°C mwrc ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [characte Smt [min te | Me] Ue] OFF CHARACTERISTICS Gate-Source Breakdown Voltage V(BRIGSS (ig = 10 wAde, Vpg = 0) 2N5460, 2N5461, 2N5462 Gate Reverse Current (Vg = 20 Vdc, Vpg = 0) 2N5460, 2N5461, 2N5462 nAde (Vgg = 30 Vdc, Vpg = 0) (VGg = 20 Vde, Vg = 0, Ta = 100°C) 2N5460, 2NS461, 2N5462 wAde (Gg = 30 Vde, Vog = 0, Ta = 100°C) Gate Source Cutoff Voltage Vas(otf) (Vos = 15 Vde, Ip = 1.0 wAde) 2N5460 6.0 2N5461 75 2N5462 9.0 Gate Source Voltage . Vde (Vps = 15 Vde, Ip = 0.1 mAdc) 2N6460 0s 40 (Vpg = 15 Vde, Ip = 0.2 mAdc) ‘2N5461 08 45 (Vps = 15 Vde, Ip = 0.4 mAdc) 2N5462 18 60 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current mAdc (ps = 15 Vde, Veg = 0, 2N5460 f = 1.0 kHz) 2N5461 2N5462 ‘SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance vfs! umbos (ps = 18 Vdc, Vgg = 0, f = 1.0 kHz) 2N5460 1000 4000 ‘2NS461 1500, 5000 2N5462 2000 6000 Output Admittance * Vos! 78 umhos: (Vos = 15 Vdc, Veg = 0, f = 1.0 kHz) Input Capacitance 7.0 (Vos = 15 Vdc, Vgg = 0, f = 1.0 MHz) Reverse Transfer Capacitance (Vos = 18 Vde, Veg = 0, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS i Noise Figure (Vos = 15 Vdc, Vgs = 0, Rg = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) Equivalent Short-Circuit Input Noise Voltage nViViz (Vos = 18 Vde, VGg = 0, f = 100 Hz, BW = 1.0 Hz) TO-92 (TO-226AA) 2 brain y Gute 3 1 Source JFET AMPLIFIERS P-CHANNEL — DEPLETION So 1 t Ps nol & aa of