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Document Number: 70262 S-04030—Rev. D, 04-Jun-01 www.vishay.com 9-1 P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 –1 2N/SST5461 1 to 7.5 40 1.5 –2 2N/SST5462 1.8 to 9 40 2 –4 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068High Input Impedance /C0068Very Low Noise /C0068High Gain: AV = 80 @ 20 /C0109A /C0068Low Capacitance: 1.2 pF Typical /C0068Low Signal Loss/System Error /C0068High System Sensitivity /C0068High-Quality Low-Level Signal Amplification /C0068Low-Current, Low-Voltage Amplifiers /C0068High-Side Switching /C0068Ultrahigh Input Impedance Pre-Amplifiers /C0068/C0069/C0083/C0067/C0082/C0073/C0080/C0084/C0073/C0079/C0078 The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information). TO-226AA (TO-92) Top View S G D D S G TO-236 (SOT-23)
1 SST5460 (B0)*
SST5461 (B1)* SST5462 (B2)* *Marking Code for TO-236 Top View 2N5460 2N5461 2N5462 /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Notes a. Derate 2.8 mW//C0095C above 25/C0095C
www.vishay.com 9-2 Document Number: 70262 S-04030— Rev. D, 04-Jun-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits 2N/SST5460 2N/SST5461 2N/SST5462 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = 10 /C0109A , VDS = 0 V 55 40 40 40 V Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 /C0109A 0.75 6 1 7.5 1.8 9 V Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –1 –5 –2 –9 –4 –16 mA VGS = 20 V, VDS = 0 V 0.003 5 5 5 nA Gate Reverse Current IGSS TA = 100/C0095C 0.0003 1 1 1 /C0109A Gate Operating Current IG VDG = –20 V, ID = –0.1 mA 3 Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –5 pA ID = –0.1 mA 1.3 0.5 4 Gate-Source Voltage VGS VDS = –15 V ID = –0.2 mA 2.3 0.8 4.5 ID = –0.4 mA 3.8 1.5 6 V Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 Dynamic Common-Source Forward Transconductance gfs VDS = –15 V, VGS = 0 V 1 4 1.5 5 2 6 mS Common-Source Output Conductance gos VDS = –15 V, VGS = 0 V f = 1 kHz 75 75 75 /C0109S Common-Source 2N 4.5 7 7 7 Reverse Transfer Capacitance C iss SST 4.5 Common-Source Reverse Transfer Capacitance C rss VDS = –15 V, VGS = 0 V f = 1 MHz 1.2 pF Common-Source 2N 1.5 2 2 2Common-Source Output Capacitance C oss SST 1.5 Equivalent Input VDS = –15 V, VGS = 0 V 2N 15 115 115 115 nV⁄ Equivalent Input Noise Voltage en VDS = –15 V, VGS = 0 V f = 100 Hz SST 15 nV⁄ √Hz VDS = –15 V, VGS = 0 V /C0087 2N 0.2 2.5 2.5 2.5 Noise Figure NF f = 100 Hz, RG = 1 M/C0087 BW = 1 Hz SST 0.2 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIB b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%.
Document Number: 70262 S-04030— Rev. D, 04-Jun-01 www.vishay.com 9-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 –20 0246 8 1 0 –16 –12 Drain Current and Transconductance vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) gfs @ VDS = –15 V, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V f = 1 kHz gfs IDSS 2.5 1000 0246 8 1 0 800 600 400 200 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) rDS @ ID = –100 mA, VGS = 0 V gos @ VDS = –15 V, VGS = 0 V f = 1 kHz rDS gos 100 –1.6 –1.2 –0.8 –0.4 Output Characteristics VDS – Drain-Source Voltage (V) – Drain Current (mA)ID 0.2 V 0.4 V 0.6 V 0.8 V 1.0 V VGS = 0 V VGS(off) = 1.5 V –0.5 –0.4 –0.3 –0.2 –0.1 Output Characteristics VDS – Drain-Source Voltage (V) – Drain Current (mA)ID 0.4 V 0.6 V 0.8 V 1.0 V 1.2 V VGS = 0 V –10 Output Characteristics VDS – Drain-Source Voltage (V) – Drain Current (mA)ID VGS = 0 V 0.5 V 2.0 V 1.0 V 1.5 V VGS(off) = 3 V –1.6 –1.2 –0.8 –0.4 Output Characteristics VDS – Drain-Source Voltage (V) – Drain Current (mA)ID VGS = 0 V 0.5 V 2.0 V 2.5 V 1.0 V 1.5 V VGS(off) = 3 VVGS(off) = 1.5 V 0.2 V S) gos– Output Conductance (/C0109 IDSS – Saturation Drain Current (mA) gfs – Forward Transconductance (mS) rDS(on) – Drain-Source On-Resistance ( Ω )
www.vishay.com 9-4 Document Number: 70262 S-04030— Rev. D, 04-Jun-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0 0.4 0.8 1.2 1.6 2 Transfer Characteristics TA = –55/C0095C 125/C0095C – Drain Current (mA)ID VGS – Gate-Source Voltage (V) 25/C0095C –10 0123 4 5 Transfer Characteristics VGS – Gate-Source Voltage (V) TA = –55/C0095C 125/C0095C – Drain Current (mA)ID 25/C0095C –0.1 –1 –10 1000 800 600 400 200 On-Resistance vs. Drain Current ID – Drain Current (mA) TA = 25/C0095C VGS(off) = 1.5 V 3 V 4 V 10 nA 1 nA 0.1 pA 100 pA 10 p A 1 pA Gate Leakage Current VDG – Drain-Gate Voltage (V) – Gate LeakageIG IGSS @ 125/C0095C IGSS @ 25/C0095C TA = 125/C0095C TA = 25/C0095C –5 mA –5 mA 0 0.4 0.8 1.2 1.6 2 Transconductance vs. Gate-Source Voltage TA = –55/C0095C 25/C0095C 125/C0095C VGS – Gate-Source Voltage (V) 0123 4 5 Transconductance vs. Gate-Source Voltage TA = –55/C0095C 25/C0095C 125/C0095C VGS – Gate-Source Voltage (V) VGS(off) = 1.5 V VDS = –15 VVGS(off) = 3 VVDS = –15 V VGS(off) = 1.5 V VDS = –15 V f = 1 kHz VGS(off) = 3 VVDS = –15 V f = 1 kHz –1 mA –0.1 mA rDS(on) – Drain-Source On-Resistance ( Ω ) gfs – Forward Transconductance (mS) gfs – Forward Transconductance (mS)
Document Number: 70262 S-04030— Rev. D, 04-Jun-01 www.vishay.com 9-5 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 –0.01 –0.1 –1 100 A V – Voltage Gain ID – Drain Current (mA) Assume VDD = –15 V, VDS = –5 V VGS(off) = 1.5 V Circuit Voltage Gain vs. Drain Current 0 4 8 12 16 20 0 4 8 12 16 20 VGS – Gate-Source Voltage (V) Common-Source Input Capacitance vs. Gate-Source Voltage – Input Capacitance (pF)C iss –5 V –15 V f = 1 MHz Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage – Reverse Feedback Capacitance (pF)C rss VGS – Gate-Source Voltage (V) –5 V –15 V f = 1 MHz 2.5 –0.1 –1 –10 0.1 Common-Source Forward Transconductance vs. Drain Current ID – Drain Current (mA) TA = –55/C0095C 125/C0095C 10 100 1 k 100 k 10 k 100 –0.1 –1 –10 Output Conductance vs. Drain Current ID – Drain Current (mA) TA = –55/C0095C 125/C0095C Equivalent Input Noise Voltage vs. Frequency f – Frequency (Hz) VDS = –15 V ID = –0.1 mA ID = –1 mA 25/C0095C VDS = –15 V f = 1 kHz VGS(off) = 3 V VDS = –15 V f = 1 kHz VGS(off) = 3 V VGS(off) = 3 V 25/C0095C A V /C0043 gfsR L 1 /C0041R Lgos R L /C004310 V ID gfs – Forward Transconductance (µS) en – Noise Voltage nV / Hz gos – Output Conductance (µS)