2N5415 MICROSEMI
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PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S 2N5416 2N5416S JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N5415 2N5416 Units Collector - Emitter Voltage V CEO 200 3 00 Vdc Collector - Base Voltage V CBO 200 350 Vdc Emitter - Base Voltage V EBO 6.0 Vdc Collector Current IC 1.0 Adc Total Power Dissipation @ T A = +25 0 C @ T C = +25 0 C P T 0.75 W W Operating & Storage Temperature R ange T op , T stg - 65 to +200 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case R θJC 17.5 0 C/W 1) Derate linearly 4.28 mW/ 0 C for T A > +25 0 C 2) Derate linearly 57.1 mW/ 0 C for T C > +25 0 C TO - 5* 2N5415 , 2N5416 2N5415S , 2N5416S TO - 39* (TO - 205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Cutoff Current V CE = 150 Vdc 2N5415 V CE = 200 Vdc 2N5415 V CE = 250 Vdc 2N5416 V CE = 300 Vdc 2N5416 ICEO 1.0 1.0 µAdc mAdc µAdc mAdc Emitter - Base Cutoff Current V EB = 6.0 Vdc IEBO 20 µAdc Collector - Emitter Cutoff Current V CE = 200 Vdc, V BE = 1.5 Vdc 2N5415 V CE = 300 Vdc, V BE = 1.5 Vdc 2N5416 ICEX 5 0 µAdc µAdc Collector - Base Cutoff Current V CB = 175 Vdc 2N5415 V CB = 280 Vdc 2N5416 ICBO1 µAdc Collector - Base Cutoff Current V CB = 200 Vdc 2N5415 V CB = 350 Vdc 2N5416 ICBO2 500 500 µAdc
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2N5415, 2N5416 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward - Curren t Transfer Ratio I C = 50 mAdc, V CE = 10 Vdc I C = 1.0 mAdc, V CE = 10 Vdc h FE 120 Collector - Emitter Saturation Voltage I C = 50 mAdc, I B = 5.0 mAdc V CE(sat) 2.0 Vdc Base - Emitter Voltage I C = 50 mAdc, V CE = 10 Vdc V BE 1.5 V dc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small - Signal Short Circuit Forward Current Transfer Ratio I C = 10 mAdc, V CE = 10 Vdc, f = 5.0 MHz h fe 3.0 Forward Current Transfer Ratio I C = 5.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz h fe 25 Output Capacitance V CB = 10 Vdc, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 15 pF Input Capacitance V EB = 5.0 Vdc, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 75 pF SWITCHING CHARACTERISTICS Turn - On Time V CC =200 Vdc, I C = 50 mAdc, I B1 = 5.0 mAdc ton 1.0 µs Turn - Off Time V CC = 200 Vdc, I C = 50 mAdc, I B1 = I B2 = 5.0 mAdc toff 10 µs SAFE OPERATING AREA DC Tests T C = +25 0 C; 1 Cycle; t = 0.4 s Test 1 V CE = 10 Vdc, I C = 1.0 Adc Test 2 V CE = 100 Vdc, I C = 100 mAdc Test 3 V CE = 200 Vdc, IC = 24 mAdc 2N5415 Test 4 V CE = 300 Vdc, I C = 10 mAdc 2N5416 (3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2