2N5164 MOTOROLA

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MOTOROLA SC {DIODES/0PTO} a1 DE e3e7255 oo7a984 & ii T-29-15 Silicon Controlled Rectifiers thru Reverse Blocking Triode Thyristor 2N5171 . .. designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. scr: ' 5 © Supplied in Either Pressfit or Stud Package © High Surge Current Rating — Its = 240 Amps KY Fruita’ @ Low On-State Voltage — 1.2 V (Typ) @ It = 20 Amps i Practical Level Triggering and Holding Characteristics — 40 mA (Max) and \\ 50 mA (Max) @ Tc = 25°C | 6 | noo MAXIMUM RATINGS i ; [—tatng [aya | va —[ 0] Peak Forward and *Repetitive Reverse Blocking VorM Voltage, Notes 1 and 2 or (2N5164, 2N5168 VRRM. 50 2N5165, 2N5169 200 (2N5166, 2N5170 400 CASE 263-04 2N5167, 2N5171 600 STYLE1 *Non-Repetitive Peak Reverse Blocking Voltage 2N5168 thru 2N6171 (2N5164, 2N5168 75 p 2N5165, 2N5169 300 4 (2N5166, 2N5170 600 A OF (2N65167, 2N5171 700 INS Dei Gren Temmal = Tame] | 7 ae (Te = 67°C) '2N5164 thru 2N5167 Circuit Fusing Aes “Peak Non-Repatitive Surge Current ism {One cycle, 60 Hz, Ty = —40 to +100°C) Preceded and followed by rated current and voltage *Peak Gate Power (Maximum Pulse Width = 10 ys) [Farge Gus Pover | Poa | 08 | wa | Peak Forward Gate Current . (Maximum Pulse Width = 10 us) [Fe ae vote | a | 0 | ‘Stud Torque (2N5168-2N5171 ‘indicates JEDEC registered dete. Notes: 1. Vopy forall types can be applied on # continuous de basis without incurring damage. Ratings tpnly Yor zot0 or negative gate voltage. Devices should not be teste for blocking capebllty In @ | manner such that the voltage applied exceeds the ret blocking votoge. | 2. Devices should not be opsrated with a postive bias applied to the gate concurrent with @ negative potential applied to the anode. | So ERI SINT IE FAT NAME COAST CET SEs me MOTOROLA THYRISTOR DEVICE DATA | 3-59 ee a OT eT Teg —_o

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2N5164 thru’ 2N5171 ‘THERMAL CHARACTERISTICS : [characterise [Symbol] Tye [Max [unit | “Thermal Resistance, Junction to Case “cw 2N5164, 65, 66, 67 2N5168, 69, 70, 71 . j ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) oe Peak Forward or Reverse Blocking Current ‘DRM. RAM (Rated VoRM oF VRRM, gate opon) Ty = 26°C BA Ty = 100°C mA Gate Trigger Current (Continuous dc}, Note 1 (Vp = 7 Vde, RL = 100.0) “(Vp = 7 Vdc, RL = 100.0, Te = —40°C) Gate Trigger Voltage (Continuous dc) Ver Volts (Vp = 7 Vde, gate open) "(Vp = 7 Vde, RL = 100, Tc = —40°C) *WVp = Rated Vorm, RL = 100 0, Ty = 100°C) Peak On-State Voltage (Pulse Width = 1 ms max, duty cycle < 1%) Volts (itm = 20 A) sirm = 414) Holding Current (Vp = 7 Vdc, gate open) 50 "(Vp = 7 Vdc, gate open, To = —40°C) 90 Gate Controlled Turn-On Time (tq + ty) tot (itm = 20 A, Igr = 40 mAdc, Vp = Rated Vorm) Circuit Commutated Turn-Off Time tq as 3 (itm = 10A,IR = 104) (tM = 104, ip = 104, Ty = 100°C) (Vp = VpRM = rated voltage) (dv/dt = 30 Vins) Critical Rate of Rise of Off-State Voltage dviat Vins (Vp = Rated Vppm, Exponential Wave Form, Gate open, Ty = 100°C) ‘Indicates JEDEC rogistored data. Note 1. Davices should not be operated with a positive bias appli to the gate concurrent with @ negative i potential applied to the anode, : MOTOROLA THYRISTOR DEVICE DATA 3-60

MOTOROLA SC {DIODES/OPTOF on de ess7e55 oozasa? a ~ 6367255 MOTOROLA SC (DIODES/OPTO?) OD1E 78987 DT-2S-1S 25164 thru 2N5171 Figuae s — GATE TRIGGER FIGURE 6 - EFFECT OF TEMPERATURE ON CHARACTERISTICS TYPigAL HOLDING CURRENT a <<< too ronnao 7 ts a recineo nth ons-20¢ iv |[t ft ft = Ee a Heo ZE Tecoma cee eel SE ama a A a Bee 2 so Pt a : Ess lI2 | aucunnswucrascen ary vourace 3 RA i : 2 008 H oor ‘40 mA GATE CURRENT REQUIRED a OO | . ae Ungar ge yee 1 acrion reurenarune eh . mon free SATEVOLTAGE Vou =10¥OLTS. ca] O92 10 20 30 40 50 80 70 89 90 10 Vee GATE VOLTAGE WOLTS DERATING AND DISSIPATION FOR RESISTIVE AND INDUCTIVE LOADS (f = 60 to 400 Hz, SINE WAVE) 3 | FIGURE 7 — AVERAGE CURRENT DERATING FIGURE 8 — ON-STATE POWER DISSIPATION so NO ere] | EA 4 2, KN = Mm beg tT el 2 2 PLANS G8 | eee PTTLAPAN = conoueron ancue poy Za (w F 3B ad L e S&C) PIAS acti ° WS TAAL TL ae a be a a | Iy(avp AVERAGE ON STATE CURRENT (AMP) IT{AV), AVERAGE ON-STATE CURRENT (AMP) | i i . MOTOROLA THYRISTOR DEVICE DATA 3-62

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FIGURE 9 — ON STATE CHARACTERISTICS . = 80 OS = a SS SS cS eS SS ne I ten Res ME | eS a SP Me

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oe) a a a a a EE eT) nena NER Ss Bt \\ 02 eee i — ae a ——— Bw a a 78 A DS SS SS SS SS SS E so} — year TT) £ oft + 7 A 2 a A AS AE | SS ee a FF A A A | 025 05 Ww 1S 20 25 30 as an ! vr: INSTANTANEOUS ON STATE VOLTAGE (VOETS) } FIGURE 10 — TYPICAL THERMAL FIGURE 11 — MOUNTING DETAILS FOR RESISTANCE OF PLATES: PRESSFIT THYRISTORS . lad SS CH OO ae a | NITE 2 oie EA a A SO ioanenmers A zat | NEL {2 £ ae A the ek Momnana 7 — it ‘diana z ‘thick bright aluminum. Heat - = ML amet one ste TN Thin-Chastis Mounting Pe PC a eT) Rosa. THERMAL RESISTANCE (°C/W) i MOTOROLA THYRISTOR DEVICE DATA { 3-63 1