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2N5114 | 2N5115 | 2N5116 P-CHANNEL JFETS - 1 CALL: +1 561-848-4311 www.solitr ondevices.com EMAIL: sales@solitr ondevices.com Part Number Package 19500/ Breakdown Voltage Current R DSON 2N5114 TO-18 476 30V -90mA 75 Ω 2N5115 TO-18 476 30V -60mA 100 Ω 2N5116 TO-18 476 30V -25mA 175 Ω ORDERING GUIDE JAN2N5114 JANTX2N5114 JANTXV2N5114 JAN2N5115 JANTX2N5115 JANTXV2N5115 JAN2N5116 JANTX2N5116 JANTXV2N5116 KEY FEATURES JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/476F LOW ON RESISTANCE SWITCHES DIRECTLY FROM TTL LOGIC OR CMOS HIGH OFF ISOLATION S LEVEL EQUIVALENT SCREENING OPTIONS LIGHT WEIGHT SECOND SOURCE FOR MICROSEMI ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage 30V Storage Temperature -65 to 200°C Gate Current 50mA Operating Junction Temperature -65 to 200°C Lead Temperature (1/16 from case, 10 sec) 300°C Power Dissipation Derating 500mW 3mW/°C @ Ta = 25°C Min. Max. Min. Max. CD 0.178 0.195 4.52 4.95 CH 0.170 0.210 4.32 5.33 HD 0.209 0.230 5.31 5.84 L1 0.050 1.27 L2 0.250 6.35 LC LD 0.016 0.021 0.41 0.53 LL 0.500 0.750 2.70 19.05 LU 0.016 0.019 0.41 0.48 Q 0.030 0.76 r 0.010 0.25 TL 0.028 0.048 0.71 1.22 TW 0.036 0.046 0.91 1.17 α 45° TP Inches mm Dimensions Ltr 2.54 TP P 0.100 2.54 0.100 TP CD CH Q LU LL LD SEATING PLATE HD 1 2 3TW TL LC LC r α P D S G and Case 1 2 PACKAGE OUTLINE & PIN CONNECTIONS Ideal for inverting switching or “Virtual Gnd” switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS).
2N5114 | 2N5115 | 2N5116 P-CHANNEL JFETS - 2 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com 2n5114_6-ds-revB-0319.indd © 2019 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Symbol Min. Max. Unit Gate-Source Breakdown Voltage VDS =0Vdc, IG = 1.0µAdc V(BR)GSS 30 Vdc Gate-Source “Off” State Voltage V DS = -15Vdc, ID = -1.0nAdc 2N5114 2N5115 2N5116 V GS(off) 5.0 3.0 1.0 10.0 6.0 4.0 Vd c Vdc Vdc Gate Reverse Current V DS = 0Vdc, VGS = 20Vdc IGSS 500 pA Drain Cutoff Current V DS = -15Vdc, VGS = 12Vdc VDS = -15Vdc, VGS = 7Vdc VDS = -15Vdc, VGS = 5Vdc 2N5114 2N5115 2N5116 I D(off) -500 -500 -500 pA pA pA Small Signal Drain to Source “On” Resistance V GS = 0Vdc, ID = -1mAdc VGS = 0Vdc, ID = 0Adc, f = 1kHz 2N5114 2N5115 2N5116 R DS(on) 100 175 Ω Ω Ω Drain Source “On” State Voltage V GS = 0Vdc, ID = -15mAdc VGS = 0Vdc, ID = -7mAdc VGS = 0Vdc, ID = -3mAdc 2N5114 2N5115 2N5116 V DS(on) -1.3 -0.8 -0.6 Vd c Vdc Vdc Small Signal, Common Source Reverse Transfer Capacitance V GS = 12Vdc, VDS = 0Vdc VGS = 7Vdc, VDS = 0Vdc VGS = 5Vdc, VDS = 0Vdc 2N5114 2N5115 2N5116 C rss 7 pF Small Signal, Common Source Short-Circuit Input Capacitance V GS = 0Vdc VDS = -15Vdc, f = 1.0MHz 2N5114 2N5115 2N5116 C iss pF Turn On Delay Time 2N5114 2N5115 2N5116 t D(on) nS nS nS Rise Time 2N5114 2N5115 2N5116 t r nS nS nS Turn Off Delay Time 2N5114 2N5115 2N5116 t d(off) nS nS nS