Download PDF2N5114 CENTRAL
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Gate-Drain Voltage V GD 30 V Gate-Source Voltage V GS 30 V Gate Current I G 50 mA Power Dissipation P D 500 mW Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5114 2N5115 2N5116 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS IGSS V GS=20V - 500 - 500 - 500 pA IGSS V GS=20V, TA=150°C - 1.0 - 1.0 - 1.0 μA IDSS V DS=18V 30 90 - - - - mA IDSS V DS=15V - - 15 60 5.0 25 mA ID(OFF) V DS=15V, VGS=12V - 500 - - - - pA ID(OFF) V DS=15V, VGS=7.0V - - - 500 - - pA ID(OFF) V DS=15V, VGS=5.0V - - - - - 500 pA ID(OFF) V DS=15V, VGS=12V, TA=150°C - 1.0 - - - - μA ID(OFF) V DS=15V, VGS=7.0V, TA=150°C - - - 1.0 - - μA ID(OFF) V DS=15V, VGS=5.0V, TA=150°C - - - - - 1.0 μA BVGSS I G=1.0μA 30 - 30 - 30 - V VGS(f) I G=1.0mA - 1.0 - 1.0 - 1.0 V VDS(ON) I D=15mA - 1.3 - - - - V VDS(ON) I D=7.0mA - - - 0.8 - - V VDS(ON) I D=3.0mA - - - - - 0.6 V rDS(ON) I D=1.0mA, VGS=0 - 75 - 100 - 150 Ω rds(ON) V GS=0, ID=0, f=1.0kHz - 75 - 100 - 150 Ω Ciss V DS=15V, VGS=0, f=1.0MHz - 25 - 25 - 25 pF Crss V GS=12V, VDS=0, f=1.0MHz - 7.0 - - - - pF Crss V GS=7.0V, VDS=0, f=1.0MHz - - - 7.0 - - pF Crss V GS=5.0V, VDS=0, f=1.0MHz - - - - - 7.0 pF TO-18 CASE R1 (4-March 2014) www.centralsemi.com
TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Gate 3) Drain MARKING: FULL PART NUMBER ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N5114 2N5115 2N5116 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS ton V DD=10V, VGS=12V, ID=15mA, RL=580Ω - 16 - - - - ns ton V DD=6.0V, VGS=7.0V, ID=7.0mA, RL=743Ω - - - 30 - - ns ton V DD=6.0V, VGS=5.0V, ID=3.0mA, RL=1.8kΩ - - - - - 42 ns toff V DD=10V, VGS=12V, ID=15mA, RL=580Ω - 21 - - - - ns toff V DD=6.0V, VGS=7.0V, ID=7.0mA, RL=743Ω - - - 38 - - ns toff V DD=6.0V, VGS=5.0V, ID=3.0mA, RL=1.8kΩ - - - - - 60 ns www.centralsemi.com R1 (4-March 2014)