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DIRECT REPLACEMENT FOR SILICONIX 2N5115 LOW ON RESISTANCE rDS(on) ≤ 100Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +200°C Operating Junction Temperature ‐ 55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 500mW MAXIMUM CURRENT Gate Current (Note 1) IG = ‐50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V 2N5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 3 ‐‐ 6 VDS = ‐15V, ID = ‐1nA VGS(F) Gate to Source Forward Voltage ‐‐ ‐ 0.7 ‐ 1 IG = ‐1mA, VDS = 0V VDS(on) Drain to Source On Voltage ‐‐ ‐ 1.0 ‐‐ VGS = 0V, ID = ‐15mA ‐‐ ‐ 0.5 ‐‐ VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐ 15 ‐‐ ‐ 60 mA VDS = ‐15V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 pA VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 5 ‐‐ VDS = ‐15V, ID = ‐1mA ID(off) Drain Cutoff Current ‐‐ ‐ 10 ‐‐ VDS = ‐15V, VGS = 12V ‐‐ ‐ 10 ‐ 500 VDS = ‐15V, VGS = 7V ‐‐ ‐ 10 ‐‐ VDS = ‐15V, VGS = 5V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 100 Ω ID = ‐1mA, VGS = 0V 2N5115 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ mS VDS = ‐15V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 20 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 100 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ 20 25 pF VDS = ‐15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 5 ‐‐ VDS = 0V, VGS = 12V, f = 1MHz ‐‐ 6 7 VDS = 0V, VGS = 7V, f = 1MHz ‐‐ 6 ‐‐ VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage ‐‐ 20 ‐‐ nV/√Hz VDG = 10V, ID = 10mA , f = 1kHz 2N5115 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 10 ns VGS(L) = ‐7V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 20 td(off) Turn Off Time 8 tf Turn Off Fall Time 30 2N5115 SWITCHING CIRCUIT PARAMETERS VDD ‐ 6V VGG 12V RL 910Ω RG 220Ω ID(on) ‐ 7mA 2N5115 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5115 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). 2N5115 Applications: Analog Switches Commutators Cho ppers 2N5115 Benefits: Low On Resistance I D(off) ≤ 500 pA Switches directl y from TTL logic Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5115 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Micross Components Europe Available Packages: 2N5115 in TO-18 2N5115 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution TO-18 (Bottom View) SWITCHING TEST CIRCUIT