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^Semi-Conductor LPtoducti, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5114 2N5U5 P-CHANNEL J ABSOLUTE MAXIMUM RATINGS (Tt = +25°C unless otherwise noted) Parameters / Test Conditions Gate-Source Voltage '" Drain-Source Voltage '" Drain-Gate Voltage Gate Current Power Dissipation TA - +25°C ' ' Storage Temperature Range Symbol Vr,s VDS Vor, la PT T.IS All Devieei 0.500 -65 to +200 Unit Vdc Vdc Vdc mAdc W 1I) Symmetrical geometry allows operation of those units with source / drain leads interchanged. (2) Derate linearly 3.0 mW/°C for TA > 25°C. TELEPHONE: (973) 376-2922 (212)227-6005 2N51.6 FAX: (973) 376-8960 FET ELECTRICAL CHARACTERISTICS (T, = +Z5°C. unless nlhenvise noted) TO-18 (TO-206AA) Parameters / Test Conditions Gate-Source Breakdown Voltage VDS = 0, 1,-. = l.OnAdc Drain-Source "On" State Voltage Vos = OVdc, Ip = -15mAdc 2N5II4 Vm = 0V dc, ID - -7.0mA dc 2N5 1 1 5 VllS = 0V dc. ID = -3.0mA dc 2N5II6 Gate Reverse Current VDS -^ 0. VflS - 20V de- Drain Current Cutoff Vcs= 12V dc. Vns = -l5Vdc 2N5II4 Vos = 7.0Vdc, Vns = -!5Vdc 2N5II5 Vos-5.0Vdc,VM--ISVdc 2N5II6 Zero Gate Voltage Drain Current Vfis = 0. Vn,--ISVdc 2N5II4 Vcis = 0. Vns = -l5Vdc 2N5II5 V.is-0. V,,s = -l5Vdc 2N5II6 \\e Cutoff V,« = -I5. l,, = -l OnAdc 2N5I14 VDS-"-l5, ID--I.QnA dc 2N5II5 V,,S--I5, !„ = -!. OrtAdc 2N51I6 Symbol V(BRKiSS v,,s,,,nl IfiSS 'worn JDSS V<is,,,« Min. -30 -15 -5.0 5.0 3.0 1.0 Max. -1.3 -0.8 -0.6 500 -500 -500 -500 -90 -60 -25 6.0 4.0 Unit Vdc Vdc pAdc pAdc mAdc Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Drain-Source "On" State Resistance V(|S-0. lD--].OmAdc 2N5II4 2N5II5 2N5II6 Small-Signal Drain-Source "On" State Resistance Vos = 0, TD = 0: f= 1kHz 2N5II4 2N5II5 2N5116 Small-Signal. Common-Source Short-Circuit Reverse Transfer Capacitance Vt,s= !2Vdc. V,,s = 0 2N5II4 V(is = 7.0V dc, V|,s = 0 2N5II5 V,,s = 5.0Vdc, VDS = 0 2N5II6 Small-Signal, Common-Source Short-Circuit Input Capacitance V,is = 0, V,)S = -l5Vdc, f= I.OMIIz 2N5I 14. 2N5I IS 2N5II6 Symbol r,Kl.,nl Cf» cm Min. Max. 100 175 100 175 7.0 Unit n pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Delay Time 2N5 1 14 2N5I15 2N5II6 Rise Time 2N5II4 2N5I15 2N5II6 Turn-Off Delay Time 2N51I4 2N5II5 2N51 16 See Figure 2 of M1L-PRF-I9500/476 Symbol Min. Max. g Unit ns qs t)S NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information rumished by NJ Semi-Conductors is believed to be both accurate and reliable nt the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors