2N5114 CALOGIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

2N5114 – 2N5116 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS).

FEATURES

  • • Low ON Resistance
  • • ID(off)<500pA
  • • Switches directly from TTL Logic ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part Package Temperature Range 2N5114-16 Hermetic TO-18 -55 oC to +200oC X2N5114-16 Sorted Chips in Carriers -55oC to +200oC CORPORATION PIN CONFIGURATION S TO-18 G,C D SWITCHING CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITSMAX MAX MAX td Turn-ON Delay Time 6 10 12 ns tr Rise Time (Note 2) 10 20 30 toff Turn-OFF Delay Time (Note 2) 6 8 10 tf Fall Time (Note 2) 15 30 50 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS TEST CONDITIONSMIN MAX MIN MAX MIN MAX BV GSS Gate-Source Breakdown Voltage 30 30 30 V I G = 1µA, VDS = 0 IGSS Gate Reverse Current 500 500 500 pA V GS = 20V, VDS = 0 1.0 1.0 1.0 µAT A 150oC ID(off) Drain Cutoff Current -500 -500 -500 pA V DS = -15V VGS = 12V (2N5114) VGS = 7V (2N5115) VP Gate-Source Pinch-Off Voltage 5 10 3 6 1 4 V V DS = -15V, ID = -1nA 5508

2N5114 – 2N5116 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued) SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS TEST CONDITIONSMIN MAX MIN MAX MIN MAX IDSS Drain Current at Zero Gate Voltage (Note 1) -30 -90 -15 -60 -5 -25 mA VGS = -0 VDS = -18V (2N5114) VDS = -15V (2N5115) VDS = -15V (2N5116) VGS(f) Forward Gate-Source Voltage -1 -1 -1 V IG = -1mA, VDS = 0 VDS(on) Drain-Source ON Voltage -1.3 -0.8 -0.6 VGS = 0 ID = -15mA (2N5114) ID = -7mA (2N5115) ID = -3mA (2N5116) rDS(on) Static Drain-Source ON Resistance 75 100 150 Ω VGS = 0, ID = -1mA rds(on) Small-Signal Drain-Source ON Resistance 75 100 150 V GS = 0, ID = 0, f = 1kHz C iss Common-Source Input Capacitance (Note 2) 25 25 25 pF VDS = -15V, VGS = 0, f = 1mHz C rss Common-Source Reverse Transfer Capacitance (Note 2) 77 7 VDS = 0 VGS = 12V (2N5114) VGS = 7V (2N5115) VGS = 5V (2N5116) f = 1mHz NOTES 1. Pulse test; duration = 2ms. 2.For design reference only, not 100% tested. TEST CONDITIONS 2N5114 2N5115 2N5116 VDD -10V -6V -6V VGG 20V 12V 8V R L 430Ω 910Ω 2KΩ R G 100Ω 220Ω 390Ω ID(ON) -15mA -7mA -3mA VIN -12V -7V -5V INPUT OUTPUT -6V 10% 90% 90% 10% VIN rt dt rt 10% OFFt 0040 VDS(ON) VDD 51Ω 1.2K 1.2K 51Ω SAMPLING SCOPE 0.1µF 0050 VGG IN 51Ω 7.5K V SAMPLING SCOPE RISE TIME 0.4ns INPUT RESISTANCE 10M Ω INPUT CAPACITANCE 1.5pF R L GR TYPICAL PERFORMANCE CHARACTERISTICS 0080 4.0 3.0 2.0 1,000 3,000 10,000 30,000 100,000 10.0 9.0 8.0 7.0 6.0 5.0 Vp (V) VDS = 20V VGS = 0 (pulsed) 1.0 0.9 0.8 0.7 0.6 0.5 Vp vs gfs gfs(µV) 0070 4.0 3.0 2.0 1 3 10 30 100 10.0 9.0 8.0 7.0 6.0 5.0 Vp (V) VDS = 20V VGS = 0 (pulsed) 1.0 0.9 0.8 0.7 0.6 0.5 Vp vs IDSS DSSt (mA) 0060 4.0 3.0 2.0 10 30 100 300 1,000 1.0 0.9 0.8 0.7 0.6 0.5 10.0 9.0 8.0 7.0 6.0 5.0 DS(ON)r (ohms) Vp (V) VDS VGS = 0.1V = 0 Vp DS(ON)vs r