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FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C Maximum Power Dissipation Continuous Power Dissipation 500mW Maximum Currents Gate Current -50mA Maximum Voltages Gate to Drain 30V Gate to Source 30V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) 2N5114 2N5115 2N5116 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 30 30 IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 5 10 3 6 1 4 VDS = -15V, ID = -1nA VGS(F) Gate to Source Forward Voltage -0.7 -1 -1 -1 IG = -1mA, VDS = 0V -1.0 -1.3 VGS = 0V, ID = -15mA -0.7 -0.8 VGS = 0V, ID = -7mA VDS(on) Drain to Source On Voltage -0.5 -0.6 V VGS = 0V, ID = -3mA -30 -90 VDS = -18V, VGS = 0V IDSS Drain to Source Saturation Current2 -15 -60 -5 -25 mA VDS = -15V, VGS = 0V IGSS Gate Leakage Current 5 500 500 500 VGS = 20V, VDS = 0V IG Gate Operating Current -5 VDG = -15V, ID = -1mA -10 -500 VDS = -15V, VGS = 12V -10 -500 VDS = -15V, VGS = 7V ID(off) Drain Cutoff Current -10 -500 pA VDS = -15V, VGS = 5V rDS(on) Drain to Source On Resistance 75 100 150 Ω VGS = 0V, ID = -1mA G S BOTTOM VIEW TO-18 Linear Integrated Systems 2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) 2N5114 2N5115 2N5116 SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS gfs Forward Transconductance 4.5 mS gos Output Conductance 20 µS VDS = -15V, ID = -1mA f = 1kHz rds(on) Drain to Source On Resistance 75 100 150 Ω VGS = 0V, ID = 0mA f = 1kHz Ciss Input Capacitance 20 25 25 25 VDS = -15V, VGS = 0V f = 1MHz 5 7 VDS = 0V, VGS = 12V f = 1MHz 6 7 VDS = 0V, VGS = 7V f = 1MHz Crss Reverse Transfer Capacitance 6 7 pF VDS = 0V, VGS = 5V f = 1MHz en Equivalent Noise Voltage 20 nV/√Hz VDG = 10V, ID = 10mA f = 1 kHz SWITCHING CHARACTERISTICS (max) SYM. CHARACTERISTIC 2N5114 2N5115 2N5116 UNITS td(on) 6 10 12 tr Turn On Time 10 20 30 td(off) 6 8 10 tf Turn Off Time 15 30 50 ns SWITCHING CIRCUIT CHARACTERISTICS SYM. 2N5114 2N5115 2N5116 VDD -10V -6V -6V VGG 20V 12V 8V RL 430Ω 910Ω 2kΩ RG 100Ω 220Ω 390Ω ID(on) -15mA -7mA -3mA VGS(H) 0V 0V 0V VGS(L) -11V -7V -5V Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 n or RG 0.1µF 51Ω RL Sampling Scope 1.2kΩ 7.5kΩ 51Ω 51Ω 1.2kΩVGS(H) VGS(L) TO -18 Three Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.
3 LEADS
0.046 0.036 45° 0.048 0.028 0.100 0.050 SWITCHING TEST CIRCUIT VGG VDD NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems.