Download PDF2N5114_08 MICROSEMI
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1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 T4-LDS-0006 Rev. 1 (063387) Page 1 of 2 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol All Devices Unit Gate-Source Voltage (1) V GS 30 Vdc Drain-Source Voltage (1) V DS 30 Vdc Drain-Gate Voltage V DG 30 Vdc Gate Current I G 50 mAdc Power Dissipation TA = +25°C (2) PT 0.500 W Storage Temperature Range T stg -65 to +200 °C (1) Symmetrical geometry allows operation of those units with source / drain leads interchanged. (2) Derate linearly 3.0 mW/°C for TA > 25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 μA dc V(BR)GSS 30 Vdc Drain-Source “On” State Voltage VGS = 0V dc, ID = -15mA dc VGS = 0V dc, ID = -7.0mA dc VGS = 0V dc, ID = -3.0mA dc 2N5114 2N5115 2N5116 VDS(on) -1.3 -0.8 -0.6 Vdc Gate Reverse Current VDS = 0, VGS = 20V dc IGSS 500 pAdc Drain Current Cutoff VGS = 12V dc, VDS = -15V dc VGS = 7.0V dc, VDS = -15V dc VGS = 5.0V dc, VDS = -15V dc 2N5114 2N5115 2N5116 ID(off) -500 -500 -500 pAdc Zero Gate Voltage Drain Current VGS = 0, VDS = -18V dc VGS = 0, VDS = -15V dc VGS = 0, VDS = -15V dc 2N5114 2N5115 2N5116 IDSS -30 -15 -5.0 -90 -60 -25 mAdc Gate-Source Cutoff VDS = -15, ID = -1.0nA dc VDS = -15, ID = -1.0nA dc VDS = -15, ID = -1.0nA dc 2N5114 2N5115 2N5116 V GS(off) 5.0 3.0 1.0 6.0 4.0 Vdc TO-18 (TO-206AA)
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 T4-LDS-0006 Rev. 1 (063387) Page 2 of 2 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Drain-Source “On” State Resistance VGS = 0, ID = -1.0mA dc 2N5114 2N5115 2N5116 r ds(on)1 100 175 Ω Small-Signal Drain-Source “On” State Resistance VGS = 0, ID = 0; f = 1kHz 2N5114 2N5115 2N5116 rds(on)2 100 175 Ω Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance VGS = 12V dc, VDS = 0 VGS = 7.0V dc, VDS = 0 VGS = 5.0V dc, VDS = 0 2N5114 2N5115 2N5116 Crss 7.0 pF Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = -15V dc, f = 1.0MHz 2N5114, 2N5115 2N5116 Ciss 25 27 pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Delay Time 2N5114 2N5115 2N5116 tdon 25 ηs Rise Time 2N5114 2N5115 2N5116 tr ηs Turn-Off Delay Time 2N5114 2N5115 2N5116 See Figure 2 of MIL-PRF-19500/476 tdoff ηs