2N5002 NJSEMI

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New Jersey Semi-Conductor Products, Ine. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 USA. FAX: (973) 376-8960 NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices Qualified Level 2N5002-" ae - 2N5004 Ht JANTX Fe JANTXV: MAXIMUM RATINGS [Ratings «| Symbol | Value | Units | [Gollesor-Emiver Voge ‘Veep | 80 | Vae | [CollesiorBase Voltage Veg | 100 [Vee] Collector Current Ic 5.0 iN 1 10 Ade 3 Total Power Dissipation @ T, = 25°C P, 2.0 w na @Tc=25°C r 58 Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS To-59* 1) Derate linearly 11.4 mW/C for Ta > 25°C 2) Derate linearly 331 mW/°C for Tc > 25°C 3) This value applies for Pw < 8.3 ms, duty cycle < 1% *Sce appendix A for package outline ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted [__Characteristies [Symbol [_ Min. | Max. | Unit] OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V, Va Ic = 100 mAde, (@ayceO © Collector-Emitter Cutoff Current Vermin || we | ne | Collector-Emitter Cutoff Current Ad Vee = 60 Vde, Vez =0 Ices nade Vee = 100 Vde, Var = 0 Emitter-Base Cutoff Current Vpe = 4.0 Vde, le = 0 to | mage Vae = 5.5 Vde, Io = 0 : ; Quality Semi-Conductors

New Jersey Semi-Conductor Products, Ine. SFEUNGFIELD, NEW JERSEY 07081 FAX: (973) 376-8960 - : 2N5002, 2N5004 JAN SERIES" aS; SAR CER ELECTRICAL CHARACTERISTICS (Con’t [___Charncteristies = ——SSS*dY Symbol | Min. | Max. | Unit] ON CHARACTERISTICS Forward-Current Transfer Ratio Ic = 50 mAde, Vee = 5.0 Vde 2N5002 20 Ic = 2.5 Ade, Vee = 5.0 Vde 30 90 Ic = 5.0 Ade, Veg = 5.0 Vde hre 20 Ic = 50 mAde, Veg = 5.0 Vde 2N5004 50 Ic =2.5 Ade, Veg = 5.0 Vde 70 200 Ic = 5.0 Ade, Veg = 5.0 Vde 40 Base-Emitter Voltage Non-saturated vy, | [sas | vee _| Vee = 5.0 Ade, Ic =2.5 Ade BE 1.45 Vde Collector-Emitter Saturation Voltage Ic = 2.5 Ade, Ip = 250 mAde VE (sat) 0.25 Vde Ic = 5.0 Ade, Ip = 500 mAdc 1s Base-Emitter Saturation Voltage Ic = 2.5 Ade, Is = 250 mAdc Voe(sat) 1.45 Vde Ic = 5.0 Ade, Ip = 500 mAde 2.2 DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit ! " | Ic = 500 mAde, Vee = 5.0 Vde, f= 10 MHz 2N5002 ad 6.0 2N5004 7.0 Output Capacitance aoe Tm |e | | SWITCHING CHARACTERISTICS Turn-On Time Tao= -500 mAGE Pos as] V seiorr = 3.7 Vde poss RL=62 ‘off Ls SAFE OPERATING AREA : DC Tests Tc = +25°C, Vee = 0, tp = 1 second 1 Cycle Test 1 Vee = 12 Vde, le = 5 Ade Test 2 Vee = 32 Vde, Ie = 1.7 Ade Test 3 Vee = 80 Vde, Ic = 100 mAde ; Quality Semi-Conductors