2N5001 NJSEMI
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Technical content
New Jarsey Semt-Conduator Products, Ina. ; a TELEPHONE: 20 STERN AVE. ers) wre eee SPRINGFIELD, NEW JERSEY 07081 (212) USA. FAX: (973) 376-8960 2n5001 (SILICON) PHYSICAL DIMENSIONS (on accordance wit JEDEC TO:59 outine) ? eT. S AS a Emitter ROPE 10 ‘ABSOLUTE MAXIMUM RATINGS (Note 1) seo | cotector Maximum Temperatures ite we Storage Temperature 65°C to +200°C “4 Operating Junction Temperature — 65°C to +200°C oss ini Na 385 Lead Temperature (Soldering, 60 second time limit) +300°C SHEAS 99 OM it _#° 28 ae Maximum Power Dissipation ia [| 3 | Total Dissipation at 50°C Case Temperature, Vg = 40V 30 Watts (TD (See Maximum Permissible Power Curve and Note 4) Se) ass 1 rr Maximum Voltages and Current 2a tno icontéon ; Vers Collector to Emitter Voltage 100 Volts ; — Veeo Collector to Emitter Voltage (Note 2) 80 Volts me ttcncaip tes am cae Veeo Emitter to Base Voltage 6.0 Volts Poca ores vt any ‘Ie Collector Current 2.0 Amps ELECTRICAL CHARACTERISTICS (25° Case Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN. TYP, MAX. UNITS TEST CONDITIONS Vego(sust) Collector to Emitter Sustaining Voltage (Notes 2 and 3) 80 Volts Ip =100mA 1,=0 BYces Collector to Emitter Breakdown Voltage . 100 Volts Io =10mA Vy =0 BV eso Emitter to Base Breakdown Voltage 6.0 Volts Io =0 le = 1.0 mA ee DC Pulse Current Gain (Note 3) 50 120 1g =50mA Vee = 5.0V hee DC Pulse Current Gain (Note 3) 70 110 200 Ip=lOA Veg = 5.0 | ee(—55*C) DC Pulse Current Gain (Nate 3) 3563 I= 10A Vip = 5.0V | ge DC Pulse Current Gain (Note 3) 30 56 Io =20A Vee = 5.0 | High Frequency Current Gain (f = 20 MHz) 30 43 1p =0.2A Veg = 5.0V Ve(sat) Pulsed Collector Saturation Voltage (Note 3) 038 0.46 Volts Ic=10A Ip=O1A Voe(sat) Pulsed Collector Saturation Voltage (Note 3) 0.75 0.85 Volts I¢=20A 1, =0.2A Vee(sat) Pulsed Base Saturation Voltage (Note 3) 098 12 Volts Ip=10A 1,=0.1A Vae(sat) Pulsed Base Saturation Voltage (Note 3) 130 15 Volts I¢=20A 1,=0.2A Vee(on) Pulsed Base Emitter “ON” Voltage (Note 3) 15 Volts I¢=20A Voge =5.0V lees Collector Cutoff Current 002 1.0 yA Veg=60V Vag =0 leso Emitter Cutoff Current 10 uA Ig=0 Veg = 5.0 cex(150°C) Collector Reverse Current 500 uA Veg =60V Veg = 2.0V Coy Collector to Base Capacitance 30°70 pF oi =0 Veg = 10V NOTES: (1) These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. (2) This rating refers to a high current point where collector to emitter voltage is lowest. (3) Pulse Conditions: length = 300us; duty cycle = 1%. (4) Contact factory for maximum permissible power under pulsed or reverse biased operating conditions.