2N5000 NJSEMI

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, Lf nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 TYPES 2N4998, 2N5000, 2NS148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Ute With 2N4999,2N5001, 2N5147, and 2N6149 6 mJ Revert* Energy Rating with IQ - 6 A and 4 V Ravarta Bias

  • mechanical data IN4MB, ZNMM ALL TERMINAL* ARE INSULATED FROM THE CASE ALL JEDEC TO-SB DIMENSIONS AND NOT8S ARE APPLICABLE NOTES; A, Within txii dlmantlpn. MM dlamatw may vary. B. Position of twmlnalt with ratpact to haxagon It not controlled. C. Tha eat4 tamparaiura may ba maaaurad anywhara on tha mtlng plana within O.IZSInch of th>nud. D. All dlman.loni <ra In Inehat unlaat otnarwM ipaolflad. 2N514E, 2N81BO THE COLLECTO R 1$ IN ELECTRICAL CONTACT WITH THE CASE ALL bIHINtlONi *•« IN IHCHtl UHLI1I OTHIIVIII VtCIPIIa. ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at 25°C case temperature (unleu otherwise noted) Collector-Base Voltage Collector-Emitter Voltage (Set Not* 1) Emitter-Bale Voltage Continuous Collector Current . . , Peak Collector Current (Sea Note 2) . Continuous Base Current 2N4998 2N5148 2NSOOO 2NS150 . . « 80V f . . « 6V »

2 A' 2 A'

5 A' SA*

1 A' 1 A'

Safe Operating Areas Sea Figures 7* and B Continuous Device Dissipation at 50°C Case Temperature (See Note 3) 30 W* 6W* Continuous Device Dissipation at 100°C Case Temperature (See Note 3) 20 W 4 W Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 4) 2 W 1 W Undamped Inductive Load Energy (See Note 5) + ^emJ-^—• Operating Collector Junction Temperature Range -65°C to 200°C* Storage Temperature Range -65°C W200°C* Lead or Terminal Temperature 1/8 Inch from Case for 60 Seconds • 300°C* »• NOTES: 1. Thli value IppllMwhtn thl DM«-»mlit«r diode i» Qpvn-circuiHd. 2. Thit v*lu« ipplln for tw < B.3 mt, duty cvcl* < 1 %• 3. For optritlon abttva (or b«low) 5O°C CM! Mmpiraturv, r«1»r to DlHlpvtion Darkling CurvM Flgur» 9 and 10. 4. o*r»u llnHrly to 200°C fr«*-«lr timpcratvr* it tr>« r«t* of M.d mw/^C Tor 2NA9fia and ZNaadO, S.7 mW/'c for 2N514B ind 2N91EO. B. This ritlng It p«Md on tft* eap*blllty ol th« trtntlnort to opwat* Hf«lv in thi unclampad indufitlw* load circuit ot Stctlon 3.2 of th. forthcoming J6DEC publication Sufgtsltd Standards on Power Tnrutuonl. L-o.4BmH, RBB1-2Qn. Hgu-100(), VBBI-IO v. vBBj-4 V.HI,-0.1 n, vcc- 10 v, ICM - • *• energy - \\f3ui. 'JEOEC raglttarad data. Thla data thaat contalni all applieabla ragistarad data In affaet at tha tlma of publication. TThl* circuit appaan on pag« B-1 of thlt data book. NJ Semiconductors reserves the nght to change test conditions, parameters limits and package dimensions without not,ce mfonnation ftim.shed by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use N J Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

TYPES 2N4998, 2NSOOO, 2NS148, ZN5150 N-P-N SILICON POWER TRANSISTORS "electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-Emitter VIBRICEO Br.,kttown Volt ^ 'CEO Collector Cutoff Curftnt ICES Collector Cutoff Current 'CEV Collector Cutoff Current 'EBO Emitter Cutoff Current Static Forwerd Current hep Transfer Ritio VBE Bast-Emitter Volttgt Cot lector -E mitter VcElsat) Sa,uraticm voltage Small-Signal Common-Emitter hf. Forward Currant Transfer Ratio Small-Signal Common-Emitter h«. Forward Current Transfer Ratio Common-Base *-obo Open-Circuit Output Capacitance TEST CONDITIONS 1C" 100mA, Ifl'O, See Note 6 VCE • 40 v. IB - o VCE - 60 v. VBE - o VC6 - 100 V, VBE - 0 vce • eo v, VBE * -2 v. TC - iso°c VEB-SV, ie-o Vf,B -6V. Ic - 0 VC6 "5V, Ic • 50 mA VCE -5V. IC-<A VCe - S V, Ic - 1 A VCE " 5 v' >C " 3 A VCE -5V. IC-'A- TC--SS°C IB- 100 mA, Ic- 1 A la-200mA. IC-2A VCE - 5 V, 'C • 2 A VCE-BV, IC-SA IB -100mA. IC-'A IB -200mA, Ic-ZA !B-600mA, lc-3A See Notes Band? Set Note* 6 and 7 S*e Notts 6 end 7 VCE -5v, IC-O.IA, t-ikHj VCE -5v, IC-O.SA, f»20MHi VCB-IOV, IE-O. I-IMHZ 2N4S98 2N5141 MIN MAX 500 30 9O ts 1.2 1,5 1.5 0.46 0.8S 2NBOOO 2NS1BO MIN MAX SO 500 70 200 1.2 1.5 1.5 0.46 0.8S S SO UNIT V uA MA mA HA CA mA V V Pf NOTES^ 6. Th«M pmr»mm*»rt mui

7 Thin pejram«itir* vm r

Inch from th* davic* b "JEOEC ragiti*r*d dal« thermal characteristics *r*>d u»infl pulM tcch jvith vouio*-t*i\\ttng c =• 300 Ui, d »f »t* fro orrvino corvticti »nd loc»i*d wlihin 0.125 PARAMETER ^(JJC Junction-to-Case Thermal Resistance RHJA Junction-io-Free-Air Thermal Resistanca 2N40M 2N6OOO MAX 87.5 2N514« 2N516O MAX 175 UNIT "C/W switching characteristics at 25° C cate temperature PARAMETER ton Turn-On Time tgff Turn-Off Time TEST CONDITIONS' 1C -2 A, Ip jij- 200mA, Igj2) - -200mA, VBEIoffl • '3.7 V. HL-15ll, See Figure 1 ALL TYPES TVP 0.1 1.1 UNIT f VOstJg* and current va.uni shown are nominal; *xact v v with Tr*nsittor pBrw