2N4991 NJSEMI
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New Sunsey Semi-Conductor Products, Ino. es 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 . (212) 227-6008 USA. FAX: (973) 376-8960 Bilateral Switch The SBS is a silicon planar, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. The device is designed to switch at 8 volts with a 0.02% /°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminatg rate effect and to obtain trig- gering at lower voltages. The Silicon Bilateral Switches are specifically designed and characterized for applica- tions where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. They are ideally suited for half wave tom a) and full wave triggering in low voltage SCR and Triac phase control circuits. The BEE __ 00s 2N4991 is in the low cost, TO-98 plastic package. \\@ oe Ties \\ EJ — 245 absolute maximum ratings: (25°C free air) (unless otherwise specified) | yom ° oy foc + e- Storage Temperature Range —65 to +150 °C / gilt? \\, Operating Junction Temperature Range —55 to +125 °C Ag : oe MIN, a E Power Dissipation* 300 mW aca | t—t-e- DC Forward Anode Curreni* 175 mA ° mans) yeep DC Gate Current *+ 5 mA ~ an ee i Be Peak Recurrent Forward Current Laren tot (1% duty eycle, 10 usec pulse nee nel mie width, Ts = 100°C) 1.0 Amp a Co seating pane Peak Non-Recurrent Forward Current (10 usec pulse width, T, = 25°C) 5.0 Amps EQUIVALENT CIRCUIT *Derate linearly to zero at 125°C. {This rating opplicable only on OFF state. Maximum gate current in ne conducting state limited by maximum power rating. A CIRCUIT SYMBOL NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However \\I Semi-Conductors assumes no responsibility for any errors or omissions discuvered in its use NJ Semi-Conducters encourages: custemers to verify that datasheets are current before placing orders
electrical characteristics:** (25°C) (uniess otherwise specified) STATIC Min. Typ. Max. Switching Voltage Vs 6 10 Vv Switching Current Is 500 WA Absolute Switching Voltage Difference | Vas — Vai | 5 V Absolute Switching Current Difference | Iss — Iss | 100) yA Helding Current In 15° mA Current (OF State) . (Vr = 5V, T, = 25°C) In 10° A (Vr = BV, T, = 85°C) In 10.0 4A Temperature Cooffftent of Switching Voltage (Ts = —55°C to +85°C) To #02 %I*C Forward Voltage Drop (On State) . (Tr = 175 mA) vy 170 V DYNAMIC Turn-on Time (See Circuit 1) ton 1.0 usec Peak Pulse Amplitude (See Circuit 3) Vo 3.5 Vv Turn-of Time (See Circuit 2) tore 30.0 usec **This device is a symmetrical negative resistance diode. All electrical limits shown apply in either direction of current flow,