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2N4856 | 2N4857 | 2N4858 N-CHANNEL JFETS - 1 CALL: +1 561-848-4311 www.solitr ondevices.com EMAIL: sales@solitr ondevices.com Part Number Package 19500/ Breakdown Voltage Current R DS(on) 2N4856 TO-18 385 40V 175mA 25 Ω 2N4857 TO-18 385 40V 100mA 40 Ω 2N4858 TO-18 385 40V 80mA 60 Ω ORDERING GUIDE JAN2N4856 JANTX2N4856 JANTXV2N4856 JAN2N4857 JANTX2N4857 JANTXV2N4857 JAN2N4858 JANTX2N4858 JANTXV2N4858 KEY FEATURES JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/385 LOW ON RESISTANCE FAST SWITCHING HIGH OFF ISOLATION S LEVEL EQUIVALENT SCREENING OPTIONS RADIATION TOLERANT SECOND SOURCE FOR VISHAY & SILICONIX ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage -40V Storage Temperature -65 to 200°C Gate Current 50mA Operating Junction Temperature -65 to 200°C Lead Temperature (1/16 from case, 10 sec) 300°C Power Dissipation Derating 1800mW 10.3mW/°C to TC ≥ 25°C DS G and Case 1 2 PACKAGE OUTLINE & PIN CONNECTIONS Min. Max. Min. Max. CD 0.178 0.195 4.52 4.95 CH 0.170 0.210 4.32 5.33 HD 0.209 0.230 5.31 5.84 L1 0.050 1.27 L2 0.250 6.35 LC LD 0.016 0.021 0.41 0.53 LL 0.500 0.750 2.70 19.05 LU 0.016 0.019 0.41 0.48 Q 0.030 0.76 r 0.010 0.25 TL 0.028 0.048 0.71 1.22 TW 0.036 0.046 0.91 1.17 α 45° TP Inches mm Dimensions Ltr 2.54 TP P 0.100 2.54 0.100 TP CD CH Q LU LL LD SEATING PLATE HD 1 2 3TW TL LC LC r α P
2N4856 | 2N4857 | 2N4858 N-CHANNEL JFETS - 2 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com 2n4856_8-ds-revC-0319.indd © 2019 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Symbol Min. Max. Unit Gate-Source Breakdown Voltage VDS =0Vdc, IG = 1.0Adc V(BR)GSS -40 Vdc Gate-Source “Off” State Voltage V DS = 15Vdc, ID = 0.5nAdc 2N4856 2N4857 2N4858 V GS(on) -0.8 -10 Vd c Vdc Vdc Gate Reverse Current V DS = 0Vdc, VGS = -20Vdc VDS = 0Vdc, VGS = -15Vdc IGSS -0.25 -0.25 nA nA Drain Current V DS = 15Vdc, VGS = -10Vdc VDS = 15Vdc, VGS = 0Vdc 2N4856 2N4857 2N4858 I D(off) 50 0.25 175 100 nA mA mA mA Static Drain - Source “On” State Resistance V GS = 0Vdc, ID = 1mAdc 2N4856 2N4857 2N4858 R DS(on) Ω Ω Ω Drain Source “On” State Voltage V GS = 0Vdc, ID = 20mAdc VGS = 0Vdc, ID = 10mAdc VGS = 0Vdc, ID = 5mAdc 2N4856 2N4857 2N4858 V DS(on) 0.75 0.5 0.5 Vd c Vdc Vdc Small Signal, Common Source Reverse Transfer Capacitance V GS = -10Vdc VDS, VD = 0Vdc, f = 1.0MHz C1 = 0.1µF, L1 =L2 ≥ 500µH Crss 8 pF Small Signal, Common Source Short-Circuit Input Capacitance V GS = -10Vdc VDS, VD = 0Vdc, f = 1.0MHz C1 = 0.1µF, C2 = 20.1m FL1 = L2 ≥ 500µH Ciss 8 pF Turn On Delay Time 2N4856 2N4857 2N4858 t D(on) nS nS nS Rise Time 2N4856 2N4857 2N4858 t r nS nS nS Turn Off Delay Time 2N4856 2N4857 2N4858 t d(off) 100 nS nS nS