2N4403 FS
Document overview
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Technical content
Rating Symbol V alue U nit Collector–Emitter Voltage V CEO – 40 Vdc Collector–Base Voltage V CBO – 40 Vdc Emitter–Base Voltage V EBO – 5.0 Vdc Collector Current — Continuous I C – 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Total Device Dissipation FR –5 Board (1) P D 225 mW T A =25 °C Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max U nit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO Vdc Collector–Base Breakdown Voltage V (BR)CBO Vdc (I C = –0.1mAdc, I E = 0) – 40 — Emitter–Base Breakdown Voltage V (BR)EBO Vdc Base Cutoff Current I BEV µAdc (V CE = –35 Vdc, V EB = –0.4 Vdc) — – 0.1 Collector Cutoff Current I CEX µAdc (V CE = –35 Vdc, V EB = –0.4 Vdc) — – 0.1 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. General Purpose Transistors PNP Silicon EMITTER COLLECTOR BASE Device Marking Shipping 2N4403LT1G 2T 3000/Tape & Reel
ORDERING INFORMATION
- 08. 08 1/6Revision No : 0 SEMICO NDUCTOR TECH NICAL DATA 2N4403 SOT–23
NOTES: 1. DIMENSIONING A ND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT-23 D JK L A C B S H GV 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2008. 08. 08 6/6Revision No : 0 SEMICO NDUCTOR TECH NICAL DATA 2N4403