2N3996 NJSEMI

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-Conductor , tfnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 , i c A Absolute Maximum Ratings \\J .O./\\ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage D.C. Collector Current Power Dissipation at 25" C Ambient Temperature Power Dissipation at 100° CCase

5 AMP POWER Temperature

.. 2W 30W TELEPHONE:. (201) (212) TELEX: 13-8720 D Operating Voltages: D Fast Switching: T0» D Fast Switching: Torr D Beta Guaranteed at 376-2922 227-6005 Vcio to 80 min. 300 nsec. 2000 nsec. 3 current levels. SWITCHING TRANSISTORS 2N399G-2N3999 Operating and Storage Temperature Range —65 to 200°C SILICON PLANAR NPN POWER TRANSISTORS Electrical Specifications (at 25°C unless noted)t Test D.C. Current gain D.C, Current gain {Note 1) D.C. Current gain (Note 1) D.C. Current gain, -55°C (Note 1) Collector saturation voltage (Note 1) Collector saturation voltage (Note 1) Base saturation voltage (Note 1) Base saturation voltage (Note 1) Collector-emitter breakdown voltage (Note 1) Emitter-base cutoff current Emitter-base cutoff current Collector cutoff current Collector cutoff current Collector cutoff current, 150°C Collector capacitance A.C. Current gain (high frequency) Switching speeds Tum.off time Symbol hf[ h,c h,E hf[ Vcr (sat) Vcc (sat) VBE (sat) V8E (sat) BVcto lf.HO llBO Ices Icto lets Cob h,. U U 2N3996 2N3998 Min. 0.6 A Max. 120 0.25 i.2 1.6 0.5 150 0.3 1.5 2N3997

2 N 3999

Min. 0.6 Max. 240 0.25 1.2 1.6 0.5 150 0.3 Units V V V V V /'A /'A /•A M /<A Pf /i Sec /iSec Test Conditions lc=50 mA, Vct=2V lc=lA, VCE=2V lc=5A, V«=5V IC=1A, VC[=2V lc=lA, la=100 mA lc=5A, ls=500 mA IC=1A, IB=100 mA IC=5A. l,=500 mA lc=50 mA, l,=0 V,t = 5V, l,:=0 V,t=8V, lc=0 VC[=90V, R,E=0 VC£=60V, l,=0 Vct=90, R,E-0 Vc.-lOV, IE=0. f=l mHz lc=lA, VCE=5V, f=10 mHz IC=1A lb,=100mA, lu= -100 mA TO-lll '"•" \\~ OH *Ll ELEMENTS IfjOlAIEO ffiOM CALE TO-59 Quality Semi-Conductors