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SOLID STATE DEVICES INC vee > Pfsaeeo13 coozcn7 3 ff T-33-05 HIGH SPEED NPN TRANSISTOR | isiuszisuss La Mirada. California 90638 - (213) 921-9660
100 VOLTS eed
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7 PSY Base © HIGH FREQUENCY, TYPICAL fr 100 MHZ
EA Ke © BVCEO 100 VOLTS MIN : iY HQ an © HIGH LINEAR GAIN, LOW SATURATION VOLTAGE LEADS tt EMITTER\\, couecron | @ 200°C OPERATING, GOLD EUTECTIC DIE ATTACH a9 an MY “as © DESIGNED FOR COMPLEMENTARY USE WITH om | LT EON 2N6192 AND 2N6193 © 2N5334 THRU 2N5337 ALSO AVAILABLE MAXIMUM RATINGS Collector = Emitter Volta v Volts " | [mw [| Collector - Base Voltage | ‘oo | 100 ‘| Volts Emitter - Base Voltage Vego | 6 | Volts Total Device Dissipation @ TC = 25 °C — — 6 Watts Derate above 25 °C 34.3 mie Operating and Storage Temperature é5to+200] © —_—i«| THERMAL CHARACTERISTICS Characteristics Symbol Unit Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristics Min. | Max. | Unit Collector - Emitter Breakdown Voltage* (c= 50 Mae) : 100 Vae . 6 Collector - Base Breakdown Voltage . Vde (lg= 200 u Adc) 8Vcg0 100 Emitter - Base Breakdown Voltage (Ig= 200 uAdc) 8Veg0 Vae 1/85 B176J3 NOTE: All specifications subject to change without notice. sn ta aceite aetna aaa
SOLID STATE DEVICES INC “J7-33-OS 126 p fJs3e.o11 coozoba 5 i Characteristics Symbol [ min. | Max. [unit | Collector Cutoff Curent (VCE = 90 Vdc) 100 uAde (VCE = 90 Vdc, VEB= 1.5 Vdc) 10 uAde =90 Vd B= d = 15001 0 mAd e Collector Cutoff Current Wop = 100 Vda 10 uAde Emitter Cutoff Current (eg= 6 Vde ) uAdc DC Current Gain 2N5338 30 = = 2N533' 60 We= 500 made, Vog= 2 vee) 3NS338 hee 30 120 (p= 2 Adc Vop= 2 Vie) 2N5339 60 240 = = 2N5338 20 (p= 5 Ad Vop= 2 Vdc) 3N3338 _ 28 Collector - Emitter Saturation Voltage™ (g= 2 Adostg = 200 mace) Vog (san 0.7 (g= 5 Ad. Ig = 500 mAdc) . 1.2 Base - Emitter Saturation Voltage" ~ — (p= 2 Ade, Ig = 200 Ado) Ve (sat (p= 5 — Ade,ig= 500 — mAdc) Current - Gain ~ Bandwith Product —" ' (p= 500 mAdc Vog= 10 Vdc.f= 10 MHz) T Output Capacitance OO ° F (op= 10 Vde,Ig= 0.= 100 Khe) ‘ob 250 Input Capacitance es (pe= 2 Wotstg = 0.1 = 100 Khe) Cin 1000 | | © Wec= 40 Vac. _ Og 100 Tis Rise Time Ip = 2.0 Adc, t 100 ns Storage Time Vpp(Off) = 3.0 Vdc, 1s ~ Igy = 'g2 = 200 mAdc) ti *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES FORWARD BIAS DC SAFE OPERATION AREA ($.0.A. CURVE) DISSIPATION DERATING CURVE CURVES APPLY BELOW RATED Voy Ty, = 25°C Se ee Eee Pf) ae See ees Fr} . 2 F.SS sa eS i IN 5 SE Ee SSP SONS a4 N Fe oe BR 3 ‘I Boi oom medalac tions ey Ss SY ; N rv Ee ips AS 1 Ws 80 19 * vee COLLECTOR-EMITTER VOLTAGE (VOLTS) ° IN 0 25 50 75 100 125 150 175 200 5 | Te Cove Tenperature—"C . SSD SOLID STATE DEVICES, INC. 6 P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 + TWX 910-583-4807 + FAX#213-921-2396 a ooo
SOLID STATE DEVICES INC Lee D Pjeaeec11 gooe20b5 7? | T-33-07 H PEED N 14890 Valley View Avenue HI PN TRANSISTOR | tsissia catia soes " (213) 921-9660 : 1 00 Vo LTS TWX 910-583-4807 FAX 213-921-2396 CASE STYLE Z JEDEC TO—111 FEATURES . ALL TERMINALS ISOLATED FROM CASE 5,134] b— 38a pe “gy | Eee © RADIATION TOLERANT ~ | gl 2 4 oo / © FAST SWITCHING, 300 NSEC MAX ton iq 1 | | Al jpcouscion| ¢ HIGH FREQUENCY, TYPICAL £,, 100 MHZ | fIK-=e1 oN © BVCEO 80 VOLTS MIN T em = 38 ae © HIGH LINEAR GAIN, LOW SATURATION VOLTAGE 1032 « hr2n ‘a oe NG y-— *® 200°C OPERATING, GOLD EUTECTIC DIE ATTACH Funehs oe rumen: © DESIGNED FOR COMPLEMENTARY USE WITH 8 case” 2N4999 AND 2N5001 BRAXIMUM RATINGS ae “ peo | ser a [Yoo | 08 aca a Base Current iB. 1 ‘Amps Total Device Dissipation @ TC = 199°C — Pp 30 Watts Derate above 100 °C 300 m/c Operating and Storage Temperature [ms Fes co +200 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction to Case ee ee “cw Collector - Emitter Breakdown Voltage* (lg= 50 made Vde FFF Vector - Base Breakdown Voltage Vdc c= 200 ute) : 8Vce0 100 Emitter - Base Breakdown Voltage (Ig= 200 uAde) Vea0 vec 1/85 B326G NOTE: All specifications subject to change without notice. eee ers eeeeeee ee ecaeeeeeeeeee rece eeeeeeeeeee eee eee dceieeneeaaiccccen eee a es a ee ae
SOLID STATE DEVICES INC “7~33-OF 126 D Pfaaeeo11 oooz070 3 &f Characteristics Symbol [ min | Max. Collector Cutoff Current ~ (VcrE= 60 Vde) Ico 10 e@ (VCE = 90 Vdc) IcEs 5 uAde VCE = 90 vd = 1500 0 Ade Emitter Cutoff Current (VEB = 5 Vdc) ‘eo 500 nAdc (VEB = 8 Vdc) 10 uAdc DC Current Gain* 2N3996 30 (ig= 50 mAdc. Vop= 2 Vded 2N3997 60 Or ade We 2 2N3996 bee 40 120 = 5 Adc Vop= 2 Vo Mc * Noe “ 2N3997 a 0 _ Collector - Emitter Saturation Voltage” (p= 1 Ade. ig= 100 made) Vog ‘sant 0.25 Vde (lg = 5 Adc. 'g = 500 mAdc) 2.0 ‘Base - Emitter Saturation Voltage" ~~ — ——_ . lig = 1 Adc. tg = 100 mAdo) Vpe «saty 0.6 1.2 Vde (g= 5 Adc. tg'= 500 mAde) 1.6 Current Gan-Bandwith Product. == yl - fi (p= 1 Ado Vop= 5 Voet= 10 Mia T 40 Mh (og= 10 Vee le=0.t= 1 Mba Son 150 [ Delay Time | Weg = a rr rr © lay Time | (oc 20 Vac (t) oy Rise Time Io= 1 Ade. on ty 300 - VEeB(Off) = 3.7 Vdc, oat Sanne lea Ti ty. Storage Time Ipi = Ip2 = 100 mAde, (tee) f+ Fatime | BL = 20 Ohms) 1S *Pulse Test: Pulse width = 300 us, DutyCycle = 2% FORWARD BIAS DC SAFE OPERATION AREA ($.0.A. CURVE) TYPICAL OPERATING CURVES CURVES APPLY BELOW RATED Veg To * 25°C - DISSIPATION DERATING CURVE ” rT TT TT LTT BEE AT TT 9 ===
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ia | TNT oe ounce 32 \\S [i= ime 68 GORY SG AT COTING | fils fis S [ter 0.5m, a 0.1 (10%) —~? ; 8 ilo one oa Sas 10} i a a SS DS VST | 8S | Pe TPT py eee Nt : 4 [ty N bs N + oc ai . a tL TT TIN CLA i $0 75 1001251507200 OO, 70 100 Te — Cove Tempareture — °C . Vee —ColleciorEnitterVeltoge — SSDIl SOLID STATE DEVICES, INC. P O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 » TWX 910-583-4807 + FAX#213-921-2396 A
SOLID STATE DEVICES INC L2E D Jje3e6012 oooe071 § | T- 33-1 HIGH SPEED NPN TRANSISTOR | Seutziscw La Mirada, California 90638 (213) 921-9660
100 VOLTS eee
JEDEC TO—59 FEATURES ALL TERMINALS ISOLATED FROM CASE rs “th Benne foo, nse © RADIATION TOLERANT es 0° | | if e@ FAST SWITCHING, TYPICAL 200 NSEC ton ‘00 7 i. ee i ji couectorn} © HIGH FREQUENCY, TYPICAL fy 100 MHZ (h——\\. AS ye © BVCEO 80 VOLTS MIN VR | EO we (fe A Tes © HIGH LINEAR GAIN, LOW SATURATION VOLTAGE q Mi i | ais N “} fas © 200°C OPERATING, GOLD EUTECTIC DIE ATTACH roa NFQA CH —— — @ DESIGNED FOR COMPLEMENTARY USE WITH eMiTTER? 2N5003 AND 2N5005 MAXIMUM RATINGS ee Pp fe» | ™ ollector = Base Voltage Yoeo Emilter~ Base Voltage Yep 6 Collector Current ce 5 Base Curent _ ‘5 Total Device Dissipation @ TO= 50°C 50 Waits Derate above 50 °C 333 mw? Operating and Storage Temperature | Ws bes to +200 THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case | rac | Characteristics Symbol Min. Collector - Emitter Breakdown Voltage” (g= 100s mAded . BVcEo* Vde ep Collector - Base Breakdown Voltage Vde BP p- 200 uate) 8Vcg0 100 Emitter - Base Breakdown Voltage (Ig = 200 uAdc) 8VEB0 Vee 1/85 B316H NOTE: All specifications subject to change without notice. rE
SOLID STATE DEVICES INC “~-33-|/ ve > Pfeaee011 coozo7e 7 ff Characteristics __ [ symbol [| Min. | Mex. | Unit Collector Cutoff Current (VCE = 60 Vdc, VBE = 2 Vde, TC = 150°C) IcEV 500 uAdc -|_(cE = 40 vai IcEO 50 uAde Collector Cutoff Current 1.0 uAdc (VCE = 60 Vdc) I WCE = 100 Vdc) CES 1.0 mAdc Emitter Cutoff Current ~~ (VEB = 5 Vdc) Tego 1.0 uAde VEB = 6 Vdc) 1.0 mAdc ‘DC Current Gain* 33002 20 . ‘ne @ 2N500. 50 (lp 50 mAdc, Vog 5 Vide) 3N5002 hees 30 90 (ig = 2-5 Ade. Vog = 5 Vie) 2N5004 70 200 . . 2N5002 20 (Ig 5 Adc, Voge 5 Vide) 2N5004 40 7 Collector - Emitter Saturation Voltage” (ig= 2-5 Ade, ig = 250 mAdc) Vog (san 0.75 Vdc (p= 5 Adc. Ig = 500 mAse) 1.5 Base - Emitter Saturation Voltage” ~~ a ~ (lg = 2.5 Adcig= 250 mado) Vpe (sat 1.45 Voc (lg = 5 Ade. Ig = 500 — mAdc) 2.2 . Current - Gain - Bandwith Product ~ ~ “2N5002 a a 60 MHz (lg= 500 mAdc Vop= 5 Vdc.f = 20 MHz) 2N5004 70 Output Capacitance . ee rs (Vp = «10 Vdc Ip = 0.t= 1 MHa) Son 250 " Base - Emitter Voltage oe TT : (Veg = 5 Vde, Ig = 2.5 Adc) Vg (ON) * 1.45 Vde © [| Delay Time | Time (Weg = 30 = Vdc. rs ie “tg a re Rise Time Ic - 5 Adc. (t,) ty + 500 Vep(Off)= 3.7 Vdc, nn Storage Time 1 Ipl = = 500 (tee) ‘s *Pulse Test: Pulse width = 300 us, DutyCycle = 2% FORWARD BIAS DC SAFE OPERATION AREA (S.0.A. CORVE) TYPICAL OPERATING CURVES DISSIPATION DERATING CURVE CURVES APPLY BELOW RATED Vogq Te = 25°C Or— 10 pees po 3 od IN <a St te s28" i rT NEL | 3 2 Rent ee ee qa NI ae Sx iN Boe A § x NS E os( tf TNT id IN 7, oo i PELE LELN © oe CE To~Cate Temperature °C Vee-Collector-Emitter Voltage—V ‘ 7 SOLID STATE DEVICES, INC. PO. Box 577, La Mirada. California 90637 Telephone: (213) 921-9660 +» TWX 910-583-4807 + FAX#213-921-2396