2N3906U FS

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

  1. 12. 18 1/6 SEMICO NDUCTOR TECH NICAL DATA 2N3906U Revision No : 0 SC-70 / SOT– 323 General Purpose Transistors PNP Silicon
  • FEATURES We declare that the material of product compliant with RoHS requirements and Halogen Free.
  • DEVICE MARKING AND ORDERING INFORMATION Device Marking 2N3906U 2A
  • MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5 Vdc Collector Current — Continuous IC –200 mAdc Shipping 3000/Tape&Reel
  • THERMAL CHARACTERISTICS Total Device Dissipation, PD 150 mW (Note 1) @ TA = 25°C Thermal Resistance, RΘJA 833 ℃/W Junction–to–Ambient Junction and Storage temperature TJ,Tstg −55∼+150 ℃ 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
  • ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Symbol Min. Typ. Max. Unit V VBR(CBO) V Emitter–Base Breakdown Voltage VBR(EBO) V (I E = –10μAdc, I C = 0) –5 – – ICEX nA ( V CE = –30 Vdc, V EB =– 3.0Vdc) – – –50 Base Cutoff Current IBL nA (V CE = –30 Vdc, V EB = –3.0Vdc) – – –50 2.Pulse Test: Pulse Width≤300 μs; Duty Cycle≤2.0%. Collector–Base Breakdown Voltage Characteristic Collector–Emitter Breakdown Voltage(Note VBR(CEO) Collector Cutoff Current EMITTER COLLECTOR BASE
  1. 12. 18 2/6 2N3906U Revision No : 0
  • ELECTRICAL CHARACTERISTICS (Ta= 25℃)(Continued) ON CHARACTERISTICS (Note 1.) Symbol Min. Typ. Max. Unit hFE (I C = –0.1 mAdc, V CE = –1.0 Vdc) 60 – – (I C = –1.0 mAdc, V CE = –1.0 Vdc) 80 – – (I C = –10 mAdc, V CE = –1.0 Vdc) 100 – 300 (I C = –50 mAdc, V CE =– 1.0 Vdc) 60 – – (I C = –100 mAdc, V CE =– 1.0 Vdc) 30 – – V (I C = –10 mAdc, I B = –1.0 mAdc) – – –0.25 (I C = –50mAdc, I B =– 5.0 mAdc) – – –0.4 V (I C = –10 mAdc, I B = –1.0 mAdc) –0.65 – –0.85 (I C = –50mAdc, I B =– 5.0 mAdc) – – –0.95 SMALL–SIGNAL CHARACTERISTICS fT MHz (I C = –10mAdc, V CE= –20Vdc, f = 100MHz) 250 – – Cobo pF (V CB = –5.0 Vdc, I E = 0, f = 1.0 MHz) – – 4.5 Cibo pF (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) – – 10 Input Impedance hie k (V CE=– 10 Vdc, I C = –1.0 mAdc,f = 1.0 kHz) 2 – 12 Voltage Feedback Ratio hre X 10 –4 (V CE= –10 Vdc, I C = –1.0 mAdc,f = 1.0 kHz) 0.1 – 10 Small–Signal Current Gain hfe (V CE=–10 Vdc, I C = – 1.0 mAdc,f = 1.0 kHz) 100 – 400 Output Admittance hoe μmhos (V CE=–10 Vdc, I C =–1.0 mAdc, f = 1.0 kHz) 3 – 60 Noise Figure NF dB (VCE=–5V, IC=–100μA, RS=1.0k ,f =1.0kHz) – – 4 SWITCHING CHARACTERISTICS Delay Time td – – 35 Rise Time tr – – 35 Storage Time ts – – 225 Fall Time tf – – 75 3.Pulse Test: Pulse Width ≤300 μs; Duty Cycle≤2.0%. ns (V CC =– 3.0 Vdc, I C = – 10 mAdc,I B1 = I B2 = –1.0 mAdc) Characteristic Current–Gain — Bandwidth Product Output Capacitance Input Capacitance (V CC = –3.0 Vdc, V BE=

0.5 Vdc,I C = –10 mAdc, I

B1 =– 1.0 mAdc) DC Current Gain Collector–Emitter Saturation Voltage(3) VCE(sat) Base–Emitter Saturation Voltage VBE(sat) Ω Ω

Figure 8. Delay and Rise Time Equivalent Test Figure 9. Storage and Fall Time Equivalent Test

  1. 12. 18 6/6 2N3906U Revision No : 0 0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0 075 0 035 0 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.071 0.087 1.80 2.20 K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF S 0.079 0.0 95 2.00 2.40 B 0.045 0.053 1.15 1.35 C 0.032 0.040 0.80 1.00 D 0.012 0.016 0.30 0.40 G 0.047 0.055 1.20 1.40 H 0.000 0.004 0.00 0.10 J 0.004 0.010 0.10 0.25 C N A L D G S B H J K 1 2 0.05 (0.002) SC-70 / SOT-323