2N3906S-AL FS
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TECH NICAL DATA 2N3906S-AL 2022. 04. 21 1/5Revision No : 0 1. FEATURES
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- S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25ºC) 4. THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Parameter Symbol Limits General Purpose Transistors PNP Silicon Device Marking Shipping 2N3906S-AL 2A 3000/Tape&Reel Unit Collector–Emitter Voltage VCEO -40 Vdc Collector–Base Voltage VCBO -40 Vdc 225 Parameter Symbol Limits Unit mW 1.8 556 Emitter–Base Voltage VEBO -5 Vdc Collector Current — Cont in uous IC -200 mAdc PD RθJA mW/ºC ºC/W −55~+150TJ,Tstg ºC SOT-23
- 04. 21 2/5Revision No : 0 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = -10 μAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = -10 μAdc, IC = 0) Collector Cutoff Current ( VCE = -30 Vdc, VEB = -3.0Vdc) Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0Vdc) ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAd c, VCE = -1.0 Vdc) Collector–Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base–Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = -10mAdc, VCE= -20Vdc, f = 100MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 2.Pulse Test: Pu lse Width ≤300 μs, Duty Cycle ≤2.0%. (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) pF ns- - 35td tr - - 35 ts - - 225 tf - - 75 V V nA nA V V MHz 30 - - - - -0.25 - - -0.4 -0.65 - -0.85 - - -0.95 fT 250 - - VBE(sat) Cobo Cibo - - 4.5 - - 10 pF Unit VBR(CEO) V -40 - - Symbol Min. VBR(CBO) -40 - - VBR(EBO) -5 - - Typ. Max. ICEX - - -50 VCE(sat) IBL - - -50 HFE 60 - 80 - - 100 - 300 60 - - 2N3906S-AL
- 04. 21 3/5Revision No : 0 ELECTRICAL CHARACTERISTICS CURVES 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 VCE,Collecter Emitter Voltage(V) IB,Base Current(mA) IC=1mA IC=30mA IC=10mA IC=100mA 100 1000 0.001 0.01 0.1 1 HFE, DC Current Gain IC, Collector Current (A) VCE=1V 150℃ 25℃ -55℃ 100 1000 0.1 1 10 Hfe, Current Gain IC, Collector Current (mA) VCE=10V,f=1KHz 0.1 1 10 C,Capacitance(pF) VR,Reverse Voltage(V) Cobo Cibo Current GainCapacitance DC Current Gain Collector Saturation Region 2N3906S-AL
- 04. 21 4/5Revision No : 0 ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0001 0.001 0.01 0.1 1 VBE(on), Base-Emitter Voltage (V) IC, Collector Current (A) VCE=1V 150℃ 25℃ -55℃ 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0001 0.001 0.01 0.1 1 VBEsat, Base-Emitter Saturation Voltage (V) IC, Collector Current (A) IC/IB=10 150℃ 25℃ -55℃ 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.001 0.01 0.1 1 VCEsat, Collector-Emitter Saturation Voltage (V) IC, Collecotr Current (A) IC/IB=10 150℃ 25℃ -55℃ VCE(sat) vs. IC VBE(sat) vs. IC VBE(on) vs. IC 2N3906S-AL
- 04. 21 5/5Revision No : 0 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 8.SOLDERING FOOTPRINT DIM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 2N3906S-AL