2N3906S-AB FS

Document overview

TECHNI CAL DATA 2N3906S-AB 1. FEATURES

Silicon PNP transistor in a SOT-23 Plastic Package
High DC Current Gain, Low Collector to Emitter Saturation Voltage, Qualified to AEC-Q101 Standards for High Reliability, HF Product.
General purpose amplifier and switching, Meet the stringent requirements of automotive applications 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25ºC) 4. THERMAL CHARACTERISTICS General Purpose Transistors PNP Silicon Device Marking Shipping 2N3906S-AB Q2A 3000/Tape&Reel Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -40 Vdc Collector–Base Voltage VCBO -40 Vdc Emitter–Base Voltage VEBO -5 Vdc Collector Current — Continuous IC -200 mAdc Parameter Symbol Limits Unit Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC PD 225 1.8 mW mW/ºC Thermal Resistance, Junction–to–Ambient(Note 1) RθJA 556 ºC/W Junction and Storagetemperature TJ,Tstg −55~+150 ºC SOT-23 2022. 04. 28 Revision No : 0 1/4

ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2.) SMALL–SIGNAL CHARACTERISTICS Characteristic Symbol Min. Typ. Max. Unit Collector–Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) VBR(CEO) -40 - - V Collector–Base Breakdown Voltage (IC = -10 μAdc, IE = 0) VBR(CBO) -40 - - V Emitter–Base Breakdown Voltage (IE = -10 μAdc, IC = 0) VBR(EBO) -5 - - V Collector ~ Base Leakage Current ( VCE = -30 Vdc, IE = 0) ICBO - - -50 nA Emitter~ Base Leakage Current (VCE = -3V, IC =0V) IEBO - - -50 nA DC Current Gain HFE (IC = -0.1 mAdc, VCE = -1.0 Vdc) 60 - - (IC = -1.0 mAdc, VCE = -1.0 Vdc) 80 - - (IC = -10 mAdc, VCE = -1.0 Vdc) 100 - 300 (IC = -50 mAdc, VCE = -1.0 Vdc) 60 - - (IC = -100 mAdc, VCE = -1.0 Vdc) 30 - - Collector–Emitter Saturation Voltage VCE(sat) V (IC = -10 mAdc, IB = -1.0 mAdc) - - -0.25 (IC = -50 mAdc, IB = -5.0 mAdc) - - -0.4 Base–Emitter Saturation Voltage VBE(sat) V (IC = -10 mAdc, IB = -1.0 mAdc) -0.65 - -0.85 (IC = -50 mAdc, IB = -5.0 mAdc) - - -0.95 Current–Gain — Bandwidth Product (IC = -10mAdc, VCE= -20Vdc, f = 100MHz) fT 250 - - MHz Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0MHz) Cobo - - 4.5 pF WITCHING CHARACTERISTICS Delay Time (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) td - - 35 ns Rise Time tr - - 35 Storage Time (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) ts - - 225 Fall Time tf - - 75 2N3906S-AB 2022. 04. Revision No : 0 2022. 04. 28 Revision No : 0 2/4

ELECTRICAL CHARACTERISTICS CURVES 2N3906S-AB 2022. 04. Revision No : 0 2022. 04. 28 Revision No : 0 3/4

Package Dimensions(SOT-23) 8.SOLDERING FOOTPRINT 2N3906S-AB Unit: mm 2022. 04. Revision No : 0 2022. 04. 28 Revision No : 0 4/4