2N3906S FS

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V l o b m y Sg n i t a R alue Unit Ve g a t l o V r e t t i m E – r o t c e l l o CCEO – 40 Vdc Ve g a t l o V e s a B – r o t c e l l o CCBO – 40 Vdc Ve g a t l o V e s a B – r e t t i m EEBO – 5.0 Vdc Collector Current — Continuous I C – 200 mAdc THERMAL CHARACTERISTICS l o b m y Sc i t s i r e t c a r a h C Max U nit Total Device Dissipation FR– 5 Board(1) P D 225 mW T A =25 °C 8 . 1C ° 5 2 e v o b a e t a r e D mW/°C θJA 556 °C/W Pn o i t a p i s s i D e c i v e D l a t o TD 300 mW Alumina Substrate, (2) T A = 25°C 4 . 2C ° 5 2 e v o b a e t a r e D mW/°C Thermal Resistance Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING 2N3906ST1G = 2A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) t i n U x a M n i Ml o b m y S c i t s i r e t c a r a h C OFF CHARACTERISTICS V) 3 ( e g a t l o V n w o d k a e r B r e t t i m E – r o t c e l l o C(BR)CEO Vdc Ve g a t l o V n w o d k a e r B e s a B – r o t c e l l o C(BR)CBO Vdc (I C = –10 µAdc, I E —0 4 –) 0 = Ve g a t l o V n w o d k a e r B e s a B – r e t t i m E(BR)EBO Vdc It n e r r u C f f o t u C e s a B BL nAdc (V CE = –30 Vdc, V EB 0 5 –—) c d V 0 . 3 – = It n e r r u C f f o t u C r o t c e l l o C CEX nAdc (V CE = –30 Vdc, V EB 0 5 –—) c d V 0 . 3 – = General Purpose Transistors PNP Silicon EMITTER COLLECTOR BASE 3. Pulse Width <300 µs; Duty Cycle <2.0%. Device Marking Shipping 2N3906S 2A 3000/Tape & Reel

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compliance with RoHS requirements.We declare that the material of product SOT–23 SEMICO NDUCTOR TECH NICAL DATA 2N3906S 2008. 01. 09 1/6Revision No : 0

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) t i n U x a Mn i Ml o b m y S c i t s i r e t c a r a h C ON CHARACTERISTICS (2) hn i a G t n e r r u C C D FE –– (I C = –0.1 mAdc, V CE – –0 6) c d V 0 . 1 – = (I C = –1.0 mAdc, V CE – –0 8) c d V 0 . 1 – = (I C = –10 mAdc, V CE 0 0 30 0 1) c d V 0 . 1 – = (I C = –50 mAdc, V CE – –0 6) c d V 0 . 1 – = (I C = –100 mAdc, V CE – –0 3) c d V 0 . 1 – = Ve g a t l o V n o i t a r u t a S r e t t i m E – r o t c e l l o CCE(sat) Vdc (I C = –10 mAdc, I B 5 2 . 0 – – –) c d A m 0 . 1 – = (I C = –50 mAdc, I B 4 . 0 –– –) c d A m 0 . 5 – = Ve g a t l o V n o i t a r u t a S r e t t i m E – e s a BBE(sat) Vdc (I C = –10 mAdc, I B 5 8 . 0 – 5 6 . 0 –) c d A m 0 . 1 – = (I C = –50 mAdc, I B 5 9 . 0 – – –) c d A m 0 . 5 – = SMALL–SIGNAL CHARACTERISTICS ft c u d o r P h t d i w d n a B — n i a G – t n e r r u CT MHz (I C = –10 mAdc, V CE – – 0 5 2) z H M 0 0 1 = f , c d V 0 2 – = Ce c n a t i c a p a C t u p t u O obo pF (V CB= –5.0 Vdc, I E 5 . 4 – –) z H M 0 . 1 = f , 0 = Ce c n a t i c a p a C t u p n I ibo pF (V EB = –0.5 Vdc, I C 0 1 – –) z H M 0 . 1 = f , 0 = he c n a d e p m I t u p n I ie kΩ (V CE= –10 Vdc, I C 2 1 0 . 2) z H k 0 . 1 = f , c d A m 0 . 1 – = ho i t a R k c a b d e e F e g a t l o V re X 10 (V CE= –10 Vdc, I C 0 1 1 . 0) z H k 0 . 1 = f , c d A m 0 . 1 – = hn i a G t n e r r u C l a n g i S – l l a m S fe — (V CE= –10 Vdc, I C 0 0 4 0 0 1) z H k 0 . 1 = f , c d A m 0 . 1 – = h *e c n a t t i m d A t u p t u O oe µmhos (V CE= –10 Vdc, I C 0 6 0 . 3) z H k 0 . 1 = f , c d A m 0 . 1 – = B dF Ne r u g i F e s i o N (V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz) –– 4.0 SWITCHING CHARACTERISTICS Delay Time (V CC = – 3.0 Vdc, V BE = 0.5 Vdc, t d — 35 Rise Time I C = –10 mAdc, I B1 = –1.0 mAdc) t d — 35 ns Storage Time (V CC = –3.0 Vdc, I C = –10 mAdc, t s — 225 ns Fall Time I B1 = I B2 = –1.0 mAdc) t f — 75 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. 2008. 01. 09 2/6Revision No : 0 SEMICO NDUCTOR TECH NICAL DATA 2N3906S

L A C B S H GV 1 2 mm inches 0.037 0 95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MI LLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1 197 2.80 3.04 B 0.0472 0.0 551 1.20 1.40 C 0.0350 0.0 440 0.89 1.11 D 0.0150 0.0 200 0.37 0.50 G 0.0701 0.0 807 1.78 2.04 H 0.0005 0.0 040 0. 013 0. 100 J 0.0034 0.0 070 0. 085 0. 177 K 0.0140 0.0 285 0.35 0.69 L 0.0350 0.0 401 0.89 1.02 S 0.0830 0. 1039 2.10 2 .64 V 0.0177 0.0 236 0.45 0.60 0 031 0.8 SOT-23 SEMICO NDUCTOR TECH NICAL DATA 2N3906S 2008. 01. 09 6/6Revision No : 0