2N3906S ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2N3906S
DESCRIPTION
- Lowvoltage(max .40V)
- Lowcurrent(max.200mA)
APPLICATIONS
- Designedforhigh-speedswitching
- Amplifierapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-a thermalresistancefromjunctiontoambient 250 K/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -40 V VCEO Collector-EmitterVoltage -40 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -200 mA Ptot TotalPowerDissipation 300 mW TJ JunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2N3906S ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CBO Collector-basebreakdownvoltage IC=-10mA,IE=0 -40 V V(BR)CEO Collector-emitterbreakdownvoltage IC=-1mA,IB=0 -40 V V(BR)EBO Emitter-basebreakdownvoltage IE=-10mA,IC=0 -5 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=-10mA;IB=-1mA -0.25 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=-50mA;IB=-5mA -0.4 V VBE(sat)1 base-emittersaturationvoltage IC=-10mA;IB=-1mA -0.85 V VCE(sat)2 Collector-EmitterSaturationVoltage IC=-50mA;IB=-5mA -0.95 V ICBO collectorcut-offcurrent VCB =-40V,IE =0 -0.1 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -0.1 μA hFE-1 DCCurrentGain IC=-0.1mA;VCE=-1V 60 hFE-2 DCCurrentGain IC=-1mA;VCE=-1V 80 hFE-3 DCCurrentGain IC=-10mA;VCE=-1V 100 300 hFE-4 DCCurrentGain IC=-50mA;VCE=-1V 60 hFE-5 DCCurrentGain IC=-100mA;VCE=-1V 30 Cob OutputCapacitance VCB=-5.0Vdc,f=1.0MHz,IE=0 4.5 pF NF NoiseFigure VCE=-5.0V,f=1.0kHz,IC=100uA, RS=1.0K 4.0 dB
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark3 iscSiliconPNPPowerTransistor 2N3906S