2N3906E KEC

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

  1. 12. 12 1/4 SEMICONDUCTOR TECHNICAL DATA 2N3906E EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 0 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.

FEATURES

: ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904E. MAXIMUM RATING (Ta=25 DIM MILLIMETERS A B D E ESM 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 C G H J 1 3 E B D A G H C J 1. EMITTER 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Type NameMarking Z A

  1. 12. 12 2/4Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V DC Current Gain * hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - Collector-Emitter Saturation Voltage * VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 V VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 Base-Emitter Saturation Voltage * VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 V VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz 250 - - MHz Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF Input Impedance hie VCE=-10V, IC=-1mA, f=1kHz 2.0 - 12 k Voltage Feedback Ratio hre 1.0 - 10 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 3.0 - 60 Noise Figure NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz - - 4.0 dB Switching Time Delay Time td Vout Total 4pFC10kΩ 275Ω V =-3.0VCC 300ns -10.6V 0.5V 0t ,t < 1ns, Du=2%r inV f - - 35 nS Rise Time tr - - 35 Storage Time tstg 20µs 1N916 or equiv. -10.9V 9.1V Vout Total 4pFC V =-3.0VCC 275Ω10kΩVin t ,t < 1ns, Du=2%rf - - 225 Fall Time tf - - 75 2N3906E * Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
  1. 12. 12 3/4 2N3906E Revision No : 0 C COLLECTOR CURRENT I (mA)COLLECTOR CURRENT I (mA) C BASE-EMITTER VOLTAGE V (V)BE BECI - V DC CURRENT GAIN h FE -3-1-0.3-0.1 COLLECTOR CURRENT I (mA)C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V h - I CCOLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION CE(sat) V - I BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA)C BE(sat) V - I -1 -2 -3 -4 -20 -40 -60 -80 -100 COMMON EMITTER Ta=25 C I =-0.1mAB -40 -80 -120 -160 -200 Ta=125 CTa =25 C Ta=-55 C COMMON EMITTER V =-1VCE FE C -10 -30 -100 -300 100 300 500 COMMON EMITTER V =-1VCE Ta=125 C Ta=25 C Ta=-55 C CE(sat) C VOLTAGE V (V) COMMON EMITTER -0.01 -0.1 -0.3 -1 -0.1 -0.03 -0.05 -0.3 -0.5 -3 -10 -30 -100 I /I =10C -300 B Ta=125 C Ta=25 C Ta=-55 C BE(sat) C VOLTAGE V (V) Ta=125 C-0.3 -0.1 -0.1 -0.5 -0.3 -1 -3 -10 Ta=25 C Ta=-55 C -30 -100 -300 COMMON EMITTER I /I =10-5 -10 C E -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8-0.9-1
  1. 12. 12 4/4 2N3906E Revision No : 0 CAPACITANCE C (pF)ob -3-1-0.3-0.1 REVERSE VOLTAGE V (V)CB C - V , C - VV - I BBASE CURRENT I (mA) -0.001 -0.1 -1 -10 CE COLLECTOR-EMITTER VOLTAGE V (V) CE B -0.2 -0.4 -0.6 -0.8 -1.0 -0.01 COMMON EMITTER Ta=25 C I =1mAC I =10mAC CI =30mA CI =100mA ob CB ib EB C (pF)ib V (V)EB -10 -30 0.5 f=1MHz Ta=25 C C C ib ob