2N3904S_03 KEC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
- 2. 25 1/4 SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES
: ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906S. MAXIMUM RATING (Ta=25 DIM MILLIMETERS 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55
0.20 MIN
1.00+0.20/-0.10 M J K E 2 3 H G A N C B D 1.30 MAX LL PP CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Base Current IB 50 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * PC : Package Mounted On 99.5% Alumina 10 0.6 Type Name Marking Lot No. ZC
- 2. 25 2/4Revision No : 3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V DC Current Gain * hFE(1) VCE=1V, IC=0.1mA 40 - - hFE(2) VCE=1V, IC=1mA 70 - - hFE(3) VCE=1V, IC=10mA 100 - 300 hFE(4) VCE=1V, IC=50mA 60 - - hFE(5) VCE=1V, IC=100mA 30 - - Collector-Emitter Saturation Voltage * VCE(sat)1 IC=10mA, IB=1mA - - 0.2 V VCE(sat)2 IC=50mA, IB=5mA - - 0.3 Base-Emitter Saturation Voltage * VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85 V VBE(sat)2 IC=50mA, IB=5mA - - 0.95 Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 300 - - MHz Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF Input Impedance hie VCE=10V, IC=1mA, f=1kHz 1.0 - 10 k Voltage Feedback Ratio hre 0.5 - 8.0 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 1.0 - 40 Noise Figure NF VCE=5V, IC=0.1mA Rg=1k f=10Hz 15.7kHz - - 5.0 dB Switching Time Delay Time td Vout Total< 4pFC10kΩ 275Ω V =3.0VCC 300ns -0.5V 10.9V 0t ,t < 1ns, Du=2%r inV f - - 35 nS Rise Time tr - - 35 Storage Time tstg 20µs 1N916 or equiv. 10.9V -9.1V Vout Total< 4pFC V =3.0VCC 275Ω10kΩVin 0t ,t < 1ns, Du=2%rf - - 200 Fall Time tf - - 50 2N3904S * Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
- 2. 25 3/4 2N3904S Revision No : 3 C COLLECTOR CURRENT I (mA)COLLECTOR CURRENT I (mA) C BASE-EMITTER VOLTAGE V (V)BE BECI - V DC CURRENT GAIN h FE 310.30.1 COLLECTOR CURRENT I (mA)C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V h - I CCOLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION CE(sat) V - I BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA)C BE(sat) V - I 1234 100 COMMON EMITTER Ta=25 C 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 I =0.1mAB 0.4 0.8 1.2 1.6 120 160 200 Ta=12 5 C Ta=25 CTa=-55 C COMMON EMITTER V =1VCE FE C 10 30 100 300 100 300 500 COMMON EMITTER V =1VCE Ta=125 C Ta=25 C Ta=-55 C CE(sat) C VOLTAGE V (V) COMMON EMITTER 0.01 0.1 0.3 1 0.1 0.03 0.05 0.3 0.5 31 03 0 1 0 0 I /I =10C 300 B Ta=125 C Ta=25 C Ta=-55 C BE(sat) C VOLTAGE V (V) Ta=125 C0.3 0.1 0.1 0.5 0.3 1 3 10 Ta=25 C Ta=-55 C 30 100 300 COMMON EMITTER I /I =105 CE
- 2. 25 4/4 2N3904S Revision No : 3 CAPACITANCE C (pF)ob 310.30.1 REVERSE VOLTAGE V (V)CB C - V , C - VV - I BBASE CURRENT I (mA) 0.001 0.1 1 10 CE COLLECTOR-EMITTER VOLTAGE V (V) CE B 0.2 0.4 0.6 0.8 1.0 0.01 COMMON EMITTER Ta=25 C I =1mAC I =10mAC CI =30mA CI =100mA ob CB ib EB C (pF)ib V (V)EB 10 30 0.5 f=1MHz Ta=25 C C C ib ob