2N3879 MICROSEMI

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NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices Qualified Level 2N3879 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector - Emitter Voltage V CEO 75 Vdc Collector - Base Voltage V CBO 120 Vdc Emitter - Base Voltage V EBO 7.0 Vdc Base Current IB 5.0 Adc Collector Current IC 7.0 Adc Total Power Dissipation @ T C = 25 0 C (1) P T 35 W Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case R θJC 5.0 0 C/W 1) Derate linearly 200 mW/ 0 C for T C > 25 0 C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 200 mAdc V (BR) CEO 75 Vdc Collector - Emitter Cutoff Current V CE = 50 Vdc ICEO 5.0 Vdc Collector - Emitter Cutoff Current V CE = 100 Vdc, V BE = 1.5 Vdc ICEX 4.0 mAdc Collector - Bas e Cutoff Current V CB = 120 Vdc ICBO 25 mAdc Emitter - Base Cutoff Current V EB = 7.0 Vdc IEBO 10 mAdc

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ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward - Current Transfer Ratio I C = 0.5 Adc, V CE = 5.0 Vdc I C = 4.0 Adc, V CE = 5.0 Vdc I C = 4.0 Adc, V CE = 2.0 Vdc h FE 100 Collector - Emitter Saturation Voltage I C = 4.0 Adc, I B = 0.4 Adc V CE(sat) 1.2 Vdc Base - Emitter Saturation Voltage I C = 4.0 Adc, I B = 0.4 Adc V BE(sat) 2.0 Vdc Base - Emitter Voltage I C = 4.0 Adc, V CE = 2.0 Vdc V BE(on) 1.8 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 500 mAdc, V CE = 10 Vdc, f = 10 MHz h fe  4.0 20 Output Capacitance V CB = 10 Vdc, I E = 0, 0.1 MHz ≤ f ≤ 1.0 MHz C obo 175 pF SWITCHING CHARACTERISTICS Turn - On Time V CC = 30 Vdc; I C = 4.0 Adc; I B = 0.4 Adc ton 0.44 µs Turn - Off Time V CC = 30 Vdc; I C = 4.0 Adc; I B = - IB = 0.4 Adc toff 1.2 µs SAFE OPERATING AREA DC Tests T C = +25 0 C, 1 Cycle, t = 1.0 s Test 1 V CE = 5.0 Vdc, I C = 7.0 Adc Test 2 V CE = 28 Vdc, I C = 1.25 Adc Test 3 V CE = 40 Vdc, I C = 500 mAdc Test 4 V CE = 75 Vdc, I C = 100 mAdc (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 115 8 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2