2N3866 ASI

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

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Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 30 V BVCER IC = 5.0 mA R BE = 10 Ω 55 V BVEBO IC = 100 µA 3.5 V ICEX VCE = 55 V V BE = -1.5 V VCE = 30 V V BE = -1.5 V T C = 200 OC 100 500 µµµµA ICEO VCE = 28 V 20 µµµµA IEBO VEB = 3.5 V 100 µµµµA hFE VCE = 5.0 V IC = 50 mA IC = 360 mA 5.0 200 --- VCE(SAT) IC = 100 mA IB = 20 mA 1.0 V ft VCE = 15 V IC = 50 mA f = 200 MHz 500 MHz COB VCB = 28 V f = 1.0 MHz 3.0 pF GPE ηηηηc VCC = 28 V P out = 1.0 W f = 400 MHz 10 dB NPN SILICON HIGH FREQUENCY TRANSISTOR 2N3866 DESCRIPTION: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 5.0 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθJC 35 OC/W PACKAGE STYLE TO-39 1 = Emitter 2 = Base 3 = Collector