2N3634_1 MICROSEMI

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1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 T4-LDS-0065 Rev. 2 (100377) Page 1 of 5 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JANSM – 3K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSD – 10K Rads (Si) 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3634* 2N3635* 2N3636* 2N3637* Unit Collector-Emitter Voltage V CEO 140 175 Vdc Collector-Base Voltage V CBO 140 175 Vdc Emitter-Base Voltage V EBO 5.0 5.0 Vdc Collector Current I C 1.0 1.0 Adc Total Power Dissipation UB: @ T A = +25°C @ TC = +25°C @ TC = +25°C PT ** 1.0 5.0 1.5 W W W Operating & Storage Junction Temperature Range T J, Tstg -65 to +200 °C * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. ** Consult 19500/357 for De-Rating curves. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140

175 Vdc

Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634, 2N3635 2N3636, 2N3637 I CBO 100 ηAdc μAdc μAdc Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 5.0Vdc IEBO ηAdc μAdc Collector-Emitter cutoff Current VCE = 100Vdc ICEO 10 μAdc TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637

3 PIN

2N3634UB, 2N3635UB 2N3636UB, 2N3637UB

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com T4-LDS-0065 Rev. 2 (100377) Page 2 of 5 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 25 150 IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3635, 2N3637 hFE 100 100 300 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc VCE(sat) 0.3

0.6 Vdc

Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc VBE(sat) 0.65 0.8

0.9 Vdc

Forward Current Transfer Ratio IC = 30mAdc, VCE = 30Vdc, f = 100MHz 2N3634, 2N3636 2N3635, 2N3637 |hfe| 1.5 2.0 8.0 8.5 Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636 2N3635, 2N3637 hfe 40 160 320 Small-Signal Short-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636 2N3635, 2N3637 hie 100 200 600 1200 Ω Small-Signal Open-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz hoe 200 μs Output Capacitance VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 10 pF Input Capacitance VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Cibo 75 pF Noise Figure VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ f = 100Hz f = 1.0kHz f = 10kHz NF 5.0 3.0 3.0 dB (1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com T4-LDS-0065 Rev. 2 (100377) Page 3 of 5 SAFE OPERATING AREA DC Tests TC = 25°C, 1 Cycle, t = 1.0s Test 1 VCE = 100Vdc, IC = 30mAdc VCE = 130Vdc, IC = 20mAdc 2N3634, 2N3635 2N3636, 2N3637 Test 2 VCE = 50Vdc, IC = 95mAdc Test 3 VCE = 5.0Vdc, IC = 1.0Adc

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com T4-LDS-0065 Rev. 2 (100377) Page 4 of 5 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm). 4. TL measured from maximum HD. true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by gauge and gauging procedure. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. r (radius) applies to both inside corners of tab. maximum (TO-39). maximum (TO-5). 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1: Physical dimensions (TO-5 and TO-39) Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TYP 5.08 TYP 7 LD .016 .021 0.41 0.53 6 LL See notes 7, 9, and 10 LU .016 .019 0.41 0.48 7 L1 050 1.27 7 L2 .250 6.35 7 P .100 2.54 5 Q .050 1.27 r .010 0.254 8 TL .029 .045 0.74 1.14 4 TW .028 .034 0.71 0.86 3 α 45° TP 45° TP 6 Term 1 Emitter Term 2 Base Term 3 Collector

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com T4-LDS-0065 Rev. 2 (100377) Page 5 of 5 FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version). NOTES: Dimensions 1. Dimensions are in inches. Ltr Inches Millimeters Notes 2. Millimeters are given for general information only. Min Max Min Max equivalent to φx symbology CW .108 2.74 LL1 .022 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.81 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559