2N3567 NJSEMI
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New Jersey Semi-Conductor Products, Ine. 20 STERN AVE. TELEPHONE: (201) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 2N/PN3567 ¢ 2N/PN3568 * 2N/PN3569 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS DIFFUSED SILICON PLANAR® EPITAXIAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Note 1) Maximum Temperatures 2N3567/8/9 PN3567/8/9 ‘Storage Temperature 55°C to +125°C 55°C to +150°C Operating Junction Temperature 125°C 180°C Lead Temperature (10 seconds) 260°C 260°C Maximum Power Dissipation (Notes 2 & 3) Total Dissipation at 25°C Case Temperature 0.8 W 1.0W at 25°C Ambient Temperature 0.3W 0.625 W Maximum Voltages and Currents 2N/PN3568 2N/PN3567/9 Vego Emitter to Base Voltage 5.0V 5.0V Vcego Collector to Base Voltage 80V 80 Vv VcEO Collector to Emitter Voltage (Notes 4 & 6) 60V 40V Ic Collector Current 500 mA 500 mA ry Base Current 100 mA 100 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) 2N/PN3567 | 2N/PN3568 | 2N/PN3569 SYMBOL CHARACTERISTIC MIN. MAX.| MIN, MAX.| MIN. Max, | UNITS TEST CONDITIONS Lretsto} Collector Cutoff Current 50 50 50 | nA | Vcg=40V, te =0 leo Emitter Cutoff Current 25 25 25} nA | Veg=4.0V,Ic=0 BVcBO Collector to Base Breakdown 80 80 80 Vv | te =0,1¢=100nA * Voltage 8VEBO Emitter to Base Breakdown 5.0 5.0 5.0 Lf Vo fic #0, le = 104A Voltage BVcEO Collector to Emitter 40 60 40 Vv | Ig=0,1¢=30ma Breakdown Voltage (Note 5) : hee OC Current Gain (Note 5) 40. 120] 40 120] 100 300 Vee = 1.0 V, I¢ = 150 mA 40 40 100 Vee = 1.0 V,I¢ = 30mA VeE(ON) | Base to Emitter “On Voltage 11 11 11] Vo | Ve = 1.0, Ic = 150 mA (Note 5) Voce (sat) Collector to Emitter Saturation 0.25 0.25 0.25 | V_ | I¢=150mA, Ig = 15mA Voltage (Note 5) Cob Collector to Base Capacitance 20 20 20} pF | le =0,Vcg= 10 V, f= 140 kHz “Cob Emitter to Base Capacitance 80 80 80} pF | Ic=0, Veg=0.5V,f=140 kHz Ihfet Magnitude of Common Emitter | 3.0 30] 30 30/30 30 Vee = 10V, Ic = 50mA Small Signal Current Gain f= 20 MHz NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations, 3. These ratings give a maximum junction temperature of 125°C and junction to case thermal resistance of 125°C/W (derating factor of 8.0 mW/°C); junction to ambient thermal resistance of 333°C/W (derating factor of 3.0 mW/ -C) for 2N3567, 2N3568, and 2N3569. These ratings give a maxi- mum junction temperature of 150°C/W and junction to case thermal resistance of 125°C/W (derating factor of 8.0 mW/ °C), junction to ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/"C) for PN3567, PN3568, and PN3569. 4, This rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse Conditions: length = 300 us; duty cycle = 1%. 6. Applicable 0 to 30 mA.