2N3564 NJSEMI
Document overview
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Technical content
New Jarsey Semi-Conductor Produats, Ina. y EE 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 . (212) 227-6006 USA. FAX: (973) 376-8960 GENERAL DESCRIPTION - The 2N3564 is an NPN Silicon Transistor. It 1s designed for high-frequency wide-band amplifiers and is useful in low-power, small- signal tuned RF and IF applications, a T= ABSOLUTE MAXIMUM RATINGS t 8 _— 4 come J Maximum Temperatures con} Storage Temperature -55°C to +125°C e — Operating Junction Temperature +125°C Maximum — Fh . 6-5 wom Lead Temperature (Soldering, 10 sec. time limit) 4260°C Maximum wore wove Maximum Power Dissipation Total Dissipation at 25°C Case Temperature 0.5 Watt na at 65°C Case Temperature 0.3 Watt "Bre at 25°C Ambient Temperature 0.2 Watt INCHES om. [win Tye Max, Maximum Voltages 3]? By 3 c } 100 120 Yopo Collector to Base Voltage }0 Volts ° ‘500 or Vv, Collector to Emitter Voltage 15 Volts F 100 CEO G 050 VeBO Emitter to Base Voltage 4.0 Volts ELECTRICAL CHARACTERISTICS (25°C Free Alr Temperature unless otherwise noted) Symbol Characteriatics Min, Typ. Max, Units Test Conditions BYono Collector to Base Breakdown Voltage 30 Volta, Ig = 100 nA 'p 0 BYen0 Emitter to Base Breakdown Voltago “4.0 Volts tf 100 pA Ip 0 BVcgoltust) _Collector to Emitter Sustaining Voltage 15 Volts Ip = 10 mA I, = 0 Voglsat) Collector Saturation Voltage 0.3 Vols tg = 20 mA ty = 2,0 nA Vpp(tat) Base Saturation Voltage 0,97 = Volts Ip = 20) mA Ih * 30 mA Tono Collector Cutoff Current $0 nA Yon* bov ho 0 hee DC Pulse Current Gain 20 (70 Ip #18) mA Yop * 10 V hy Low Frequency Current Gain 2080 I, 2 18 mA Von 2 10 V te (t= 1Ke) c CE Me High Frequency Current Gain 40 7.8 Ip * 18 mA Vor *10V ~ (t= 100me) Ls Roal Part of hy, (f * 350 me) 30 ohma tg = 18 mA Nog 8 10 ¥ Cobo Open Circuit Output Capacitance 25) (36) opt Yop* 10 V of 0 NJ Semi-Conductors reserves the right to change test conditions, parameter limits nd package dimensions without notice Information furnished by NJ Semi-Cunductors is believed to be both accurate and reliable at the time of going to press, However \\J Semi-Conduetors assuines no responsibility for any ertors of vmnissions discovered in its use NJ Semi-C onducters encourages we tomers to verify that datasheets are cuerent betore placing orders