2N3559 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (2121227-6005 TYPES 2N3559, 2N3560, 2N3561, 2N3562 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS
1 AMP AVG-30 to 200 VOLTS-200 ^ GATE SENSITIVITY
ALL PLANAR, OXIDE-PASSIVATED JUNCTIONS NO SOLDER OR FLUXES
- High Operating Temperatures
- High Surge Current Capability
- Fast Switching Speeds
- Low Forward Voltage Drop mechanical data These devices are in precision welded, hermetically sealed enclosures. Extreme cleanliness during the assembly process prevents sealed-in contamination. The approximate unit weight is 1.8 grams. 0.760 0.140 ) "I — 0«5D,A Mi**™ *THE ANODE IS IN ELECTRICAL CONTACT WITH THE CASE. 1.5 1 1
0.100 MIN H —
MIN "•"" &TSUMMINT Hjr -°-IO° A*™ *THE GATE TERMINAL IS — POINT _J 1 xpj^^ — CONNFfTFD TO A P REGION =— -^M>-» _!!« o.oi9 °-1co/ /L,5-W *ALL JEOEC TO-5 DIMENSIONS o.»i» „»/ / r- / AND NOTES ARE APPLICAHE. All OlMtNllOM AH IN INCHIS UNltSI OTHEIWIM J»ieimt) * absolute maximum ratings over operating case temperature range (unless otherwise noted) Continuous Forward Blocking Voltage, VR (See Note 1) Peak Forward Blocking Voltage (See Note 1) Continuous Reverse Blocking Voltage, VRO (See Note 2) Peak Reverse Blocking Voltage (See Note 2) Continuous or RMS Anode Forward Current at (or below) 100°C Case Temperature (See Note 3) Average Anode Forward Currant (180° Conduction Angle) at (or below) 100°C Case Temperature (See Note 4) Peak Anode Surge Currant (See Note 5) Peak Gate Reverse Voltage Peak Gate Forward Current (Pulse width < 8 msec) Average Gate Power Dissipation Operating Case Temperature Range Storage Temperature Range 2N3559 2N3560 2N3561 100 100 100 100 2N3562 200 200 200 200 n 1.6 250 100 — 65 to +150 -65 to +200 UNIT V V V a a a V ma mw NOTES: I. Th«u >alun apply when tht gult-talhodt nilstanct HGK < 1 kit. 2. Thut values apply when the gale-calhode reilslonte KSK = cr'. 3. This volut opplln lot conllnuous d-c gr single-phase, M-cps, holl-slm-wavf operation wilft resislive load. Above 100°C, derale according to Figure 13. 4. This value maf bi opplltif continuously under single-phase, iO-cpi, hall-slni-wan operation with resistive load. Above l<rO°C derate according to Figure 11. 5. This value oppliei for one 40-cpl hall line wave when the device li operating at (or below) rated values of peak reverie blocking voltage and anode forward current. Surge may bt repeated gfter the device hoi returned to original thermal equilibrium.
ttrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER . Static Anode Forward w Blocking Current , Static Anode Reverse *° Blocking Current IGKO Gate Reverse Current IGT Gate Trigger Current VST Gate Trigger Voltage IHR Holding Current Vf Forward Voltage ls<? Gate Turn-Off Current VSQ Gate Turn-Off Voltage dv/dt Critical Rate of Anode Voltage Rise TEST CONDITIONS VAK = Rated VFR, RSK = 1 kft VAK - Rated VPR, RSK = 1 kft, Tc = 150°C VKA = Rated VRO, Is = 0 VKA = Rated VRO, Is = 0, Tc = 150eC VKS = 5v, IA = 0 VAA = 5 v, RL = 12 ft. PWG > 10 /xsec VAA — 5 », KL — 1Z It, y _ _jjo(; VAA = 5 v, RL = 12 0, PWG 5: 10 /*sec V -5v R -12H 'Ws>10M$ec, VAA-SV, RL-121I, TC = 150oc Roc = 1 I'd. RL = 2kfl RSK = 1kH, RL=2kn, TC=-«50C IF = 1.6 a, RSK 5: 1 kO, See Note 6 IF = 200 ma (See Note 7), VAA ^ 1 00 V (Not to exceed Rated VFR) VKO = 1 » MIN 0.2 TYP 0.6 1.8 -40 400 MAX 0.1 100 -0.1 200 0.9 0.8 S 1.4 UNIT no /*a pa fia pa fia V V ma ma V ma V v/fisec .witching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton Turn-On Time t0f( Commutating Turn-Off Time TEST CONDITIONS VAA = 200 v, RL = 2.2kfl, Ra = 100ft, Vir = 3v, See Fig. 14 VAA = SO v, RL = 140ft, 1N645 between gate and cathode, See Fig. 15 2N3562 TYP 0,55 2.2 UNIT JU.MC /xsec hermal characteristics PARAMETER 0J-C Junction-to-Case Thermal Resistance MAX UNIT C°/w