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Rev 1.0 31/01/25General purpose high voltage amplifier in bare die form Complement to PNP 2N5401 NPN Transistor Bare Die, 2N3501 Features: Die Dimensions in µm (mils) 660 (25.98) 100 (3.94) 100 (3.94) 100 (3.94) E B B E 660 (25.98) High Breakdown Voltage Low V CE(sat) Characterized at temperature extremes High Reliability Gold Back Metal High Reliability tested gr ades for Military + Space Ordering Information: The following part suffixes apply: No suffix - MIL-STD-750 /2072 Visual Inspection “ H” - MIL-STD-750 /2072 Visual Inspection + MIL-STD-38534 Class H LAT “ K” - MIL-STD-750 /2072 Visual Inspection + MIL-STD-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification E = EMITTER B = BASE DIE BACK = COLLECTOR Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Sawn Wafer on Tape – Specific request Unsawn Wafer – Specific request With additional electrical selection – Specific request Sawn as pairs or adjacent pair pick – Specific request Die Size (Excluding Saw Street) 660 x 660 25.98 x 25.98 µm mils Base & Emitter Pad Size 100 x 100 3.94 x 3.94 µm mils Die Thickness 230 (±20) 9.06 (±0.79) µm mils Top Metal Composition Al - 2.6µm Back Metal Composition AuAs - 0.9µm Page 1 of 3 www.siliconsupplies.com
Absolute Maximum Ratings TA = 25°C unless otherwise stated Rev 1.0 31/01/25 NPN Transistor Bare Die, 2N3501 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Junction & Storage Temperature TJ , Tstg 150 °C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO I C = 10µA 150 - - V Collector-Emitter Breakdown Voltage1 V(BR)CEO I C = 10mA 150 - - V Emitter-Base Breakdown Voltage V(BR)EBO I E = 10µA 6 - - V VCB = 75V - - 50 nA Collector Cut-off Current ICBO VCB = 150V - - 10 µA VEB = 4V - - 25 nA Emitter Cut-off Current IEBO VEB = 6V - - 10 µA ON CHARACTERISTICS1 VCE = 10V, IC = 0.1mA 35 - - - VCE = 10V, IC = 1mA 50 - - - VCE = 10V, IC = 10mA 75 - - - VCE = 10V, IC = 150mA 100 - 300 - Forward-Current Transfer Ratio hFE VCE = 10V, IC = 300mA 20 - - - IC = 10mA, IB = 1mA - - 0.2 V Collector-Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA - - 0.4 V IC = 10mA, IB = 1mA - - 0.8 V Base Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA - - 1.2 V SMALL SIGNAL CHARACTERISTICS2 Forward Current Transfer Ratio |hfe| VCE = 20V, IC = 20mA, f = 100MHz 1.5 - 8.0 - Output Capacitance Cobo V CB = 10V,IE = 0, 100kHz ≤ f ≤ 1MHz - - 8.0 pF Input Capacitance Cibo V EB = 0.5V,IC = 0, 100kHz ≤ f ≤ 1MHz - - 80 pF SWITCHING CHARACTERISTICS2 Turn-On Time ton V EB = 5V, IC = 150mA, IB1 = 15 mA - - 115 ns Turn-Off Time toff I C = 150mA, IB1 = IB2 = -15mA - - 1150 ns Electrical Characteristics TA = 25°C unless otherwise stated 1. Pulse Test: pulse width = 300µs, duty cycle < 2.0% 2. Not production testing in die form, characterized by chip design & package verification. Page 2 of 3 www.siliconsupplies.com
Rev 1.0 31/01/25 NPN Transistor Bare Die, 2N3501 DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind. LIFE SUPPORT POLICY: Silicon Supplies Ltd components may be used in life support devices or systems only with the express written approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 3 of 3 www.siliconsupplies.com