2N3440 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2N3440

DESCRIPTION

  • Silicon Epitaxial Planar NPN transistor
  • Low Saturation Voltage - : V CE(sat)= 0.5V(Max)@ IC= 50mA, IB= 4mA
  • Good Linearity of hFE

APPLICATIONS

  • Designed for use in consumer and industrial line-operated applications. particularly suited as drivers in high-voltage low current inverters, switching and series regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3.0 A IB Base Current 0.5 A PC Collector Power Dissipation @ Ta<50℃ 1.0 W Collector Power Dissipation @ TC=25℃ 10 TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -60~200 ℃

INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2N3440

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(sus) Collector-Emitter Sustaining Voltage IC = 50 mA 250 V VCE(sat) Collector-Emitter Sa turation Voltage I C= 50mA; IB= 4mA 0.5 V VBE(sat) Base-Emitter Satu ration Voltage I C= 50mA; IB= 4mA 1.3 V ICBO Collector Cutoff Current V CB= 250V; IE= 0 20 μA ICEO Collector Cutoff Current V CE= 200V; IB= 0 50 μA IEBO Emitter Cutoff Current V EB= 6V; IC= 0 20 μA hFE DC Current Gain I C= 20mA ; VCE= 10V 40 160 fT Current-Gain—Bandwidth Product I C= 5mA ; VCE= 10V 15 MHz