Download PDF2N3439 COMSET
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NNPPNN 2N3439 – 2N3440 COMSET SEMICONDUCTORS 1/3 HHIIGGHH VVOOLLTTAAGGEE TTRRAANNSSIISSTTOORR The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3439 2N3440 VCEO Collector-Emitter Voltage IB = 0 350 250 V VCBO Collector-Base Voltage I E = 0 450 300 V VEBO Emitter-Base Voltage I C = 0 7 V IC Collector Current 1 A IB Base Current 500 mA PD Total Power Dissipation Tamb = 25° 1 W Tcase = 25° 10 TJ Junction Temperature 200 °C TStg Storage Temperature range -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 175 °C/W RthJ-c Thermal Resistance, Junction to case 35 °C/W B C E
NNPPNN 2N3439 – 2N3440 08/08/2012 COMSET SEMICONDUCTORS 2/3
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB = 360 V, IE = 0 2N3439 - - 20 µA VCB = 250 V, IE = 0 2N3440 ICEO Collector Cutoff Current VCE = 300 V, IB = 0 2N3439 - - 20 µA VCE = 200 V, IB = 0 2N3440 - - 50 ICEX Collector Cutoff Current VCE = 450 V, VBE = -1.5 V 2N3439 - - 500 µA VCE = 300 V, VBE = -1.5 V 2N3440 IEBO Emitter Cutoff Current VBE = 6 V, IC = 0 2N3439 - - 20 µA 2N3440 VCEO Collector-emitter Breakdown Voltage IC = 50 mA, IB = 0 2N3439 350 - - V 2N3440 250 - - hFE DC Current Gain IC = 2 mA, VCE = 10 V 2N3439 30 - - - IC = 20 mA, VCE = 10 V 2N3439 40 - 160 2N3440 VCE(SAT) Collector-Emitter saturation Voltage IC = 50 mA, IB = 4 mA - - 0.5 V VBE(SAT) Base-Emitter saturation Voltage IC = 50 mA, IB = 4 mA - - 1.3 V fT Transition frequency IC = 10 mA, VCB = 10 V f = 5 MHz 15 - - MHz Cob Output Capacitance VCB = 10 V, f = 1MHz - - 10 pF
NNPPNN 2N3439 – 2N3440 08/08/2012 COMSET SEMICONDUCTORS 3/3 MECHANICAL DATA CASE TO-39 Revised August 2012 Information furnished is believed to be accurate and reliable. Ho wever, Comset Semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. Da ta are subject to change without notice. Comset Se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. Comset Semicon ductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector