2N3439 MICROSEMI

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NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Devices Qualified Level 2N3439 2N3439L 2N3440 2N3440L JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3439 2N3440 Units Collector - Emitter Voltage V CEO 350 250 V dc Collector - Base Voltage V CBO 450 300 Vdc Emitter - Base Voltage V EBO 7.0 Vdc Collector Current IC 1.0 Adc Total Power Dissipation @T A = 25 0 C (1) @T C = 25 0 C (2) P T 0.8 5.0 W W/ 0 C Operating & Storage Temperature Range T op , T stg - 55 to +200 0 C 1) Derate linearly 4.57 mW/ 0 C for T A > +25 0 C 2) Derate linearly 28.5 mW/ 0 C for T C > +25 0 C TO - 5* 2N3439L, 2N3440L TO - 39* (TO205 - AD) 2N3439, 2N3440 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 50 mAdc 2N3439 2N3440 V (BR) CEO 350 250 Vdc Collector - Emitter Cutoff Current V CE = 300 Vdc 2N3439 V CE = 200 Vdc 2N3 440 ICEO 2.0 2.0 µAdc µAdc Emitter - Base Cutoff Current V EB = 7.0 Vdc IEBO 10 µAdc

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2N3439, L, 2N3440, L, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS (con’t) Collector - Emitter Cutoff Current V CE = 450 Vdc, V BE = - 1.5 Vdc 2N3439 V CE = 300 Vdc, V BE = - 1.5 Vdc 2N3440 ICE X 5.0 5.0 µAdc µAdc Collector - Base Cutoff Current V CB = 360 Vdc 2N3439 V CB = 250 Vdc 2N3440 V CB = 450 Vdc 2N3439 V CB = 300 Vdc 2N3440 ICBO 2.0 2.0 5.0 5.0 µAdc ON CHARACTERISTICS (3) Forward - Current Transfer Ratio I C = 20 mAdc, V CE = 10 Vdc I C = 2.0 mAdc, V CE = 10 Vdc I C = 0.2 mAdc, V CE = 10 Vdc h FE 160 Collector - Emitter Saturation Voltage I C = 50 mAdc, I B = 4.0 mAdc V CE(sat)

0.5 Vdc

Base - Emitter Saturation Voltage I C = 50 mAdc, I B = 4.0 mAdc V BE(sat)

1.3 Vdc

Magnitude of Common Emitter Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 10 mAdc, V CE = 10 Vdc, f = 5.0 MHz h fe  3.0 Forward Current Transfer Ratio I C = 5.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz h fe Output Capacitance V CB = 10 Vdc, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 10 pF Input Capacitance V EB = 5.0 Vdc, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 75 pF SWITCHING CHARACTERISTICS Turn - On Time V CC = 200 Vdc; I C = 20 mAdc, I B1 = 2 .0 mAdc ton 1.0 µs Turn - Off Time V CC = 200 Vdc; I C = 20 mAdc, I B1 = - IB2 = 2.0 mAdc toff 10 µs SAFE OPERATING AREA DC Tests T C = 25 0 C, 1 cycle, t = 1.0 s Test 1 V CE = 5.0 Vdc, I C = 1.0 Adc Both Types Test 2 V CE = 350 Vdc, I C = 14 mAdc 2N3439 Test 3 V CE = 250 Vdc, I C = 20 mAdc 2N3440 (3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2