Download PDF2N3439_02 SEME-LAB
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information f urnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any erro rs or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 3066 Issue: 1 0.5A –65 to 200°C 200°C HIGH VOLTAGE NPN TRANSISTORS
FEATURES
- DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR HIGH VOLTAGE APPLICATIONS: These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. V CBO Collector – Base Voltage (IE = 0) VCEO Collector – Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Power Dissipation at Tcase ≤ 25°C Tamb ≤ 50°C Tstg Storage Temperature Tj Junction Temperature 450V 350V 300V 250V MECHANICAL DATA Dimensions in mm (inches) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)2N3439 2N3440 0.89 (0.035)max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45° 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 0.74 (0.029) 1.14 (0.045) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector TO39 PACKAGE (TO-205AD)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information f urnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any erro rs or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 3066 Issue: 1 Parameter Test Conditions Min. Typ. Max. Unit IC = 50mA 2N3439 IC = 50mA 2N3440 VCE = 300V 2N3439 VCE = 200V 2N3440 VCE = 450V 2N3439 VCE = 300V 2N3440 VCB = 350V 2N3439 VCB = 250V 2N3440 VEB = 6V IC = 50mA I B = 4mA IC = 50mA I B = 4mA IC = 20mA VCE = 10V IC = 2mA VCE = 10V VCEO(sus)* Collector – Emitter Sustaining Voltage (IB = 0) ICEO Collector Cut-off Current B = 0) ICEX Collector Cut-off Current BE = -1.5V) ICBO Collector – Base Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain Parameter Test Conditions Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) fT Transition Frequency C ob Output Capacitance hfe Small Signal Current Gain IC = 10mA V CE = 10V f = 5MHz VCB = 10V f = 1MHz IC = 5mA V CE = 10V f = 1kHz MHz pF * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) 350 250 500 500 0.5 1.3 40 160 V µA µA µA µA V V 2N3439 only THERMAL DATA Parameter Min. Typ. Max. Unit R θJA Thermal Resistance Junction to Ambient 175 °C/W R θJC Thermal Resistance Junction to Case 35 °C/W