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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL 2N3439 2N3440 UNITS Collector -Emitter Voltage VCEO 350 250 V Collector -Base Voltage VCBO 450 300 V Emitter -Base Voltage VEBO 7.0 V Collector Current Continuous IC 1.0 A Base Current IB 0.5 A Power Dissipation@ Ta=25 degC PD 1.0 W Derate Above 25 deg C 5.7 mW/deg C Power Dissipation@ Tc=25 degC PD 5.0 W Derate Above 25 deg C 28.6 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 175 deg C/W Junction to Case Rth(j-c) 35 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N 3439 2N3440 UNITS Collector -Emitter Voltage VCEO(sus)* IC=50mA,IB=0 >350 >250 V Collector-Cut off Current ICBO VCB=360V, IE=0 <20 - uA VCB=250V, IE=0 - <20 uA ICEO VCE=300V, IB=0 <20 - uA VCE=200V, IB=0 - <50 uA ICEX VCE=450V,VBE=1.5V <500 - uA VCE=300V,VBE=1.5V - <500 uA Emitter-Cut off Current IEBO VEB=6V, IC=0 <20 <20 uA DC Current Gain hFE* IC=2mA,VCE=10V >30 - IC=20mA,VCE=10V 40-160 40-160 Collector Emitter Saturation VoltageVCE(Sat)* IC=50mA,IB=4mA <0.5 <0.5 V Base Emitter Saturation Voltage VBE(Sat) * IC=50mA,IB=4mA <1.3 <1.3 V IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited Data Sheet Page 1 of 3
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N3439/3440 DESCRIPTION SYMBOL TEST CONDITION 2N 3439 2N3440 UNITS SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain. hfe IC=5mA, VCE=10V, >25 >25 f=1kHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz <10 <10 pF Input Capacitance Cib VEB=5V, IC=0, f=1MHz <75 <75 pF Current Gain-Bandwidth Product ft IC=10mA, VCE=10V >15 >15 MHz f=5MHz Real Part of Input Impedence Re(hie) VCE-10V, IC=5mA <300 <300 ohms f=1MHz *Pulse Test:- Pulse Width =300us, Duty Cycle=2% TO-39 Metal Can Package PACKAGE Net Weight/QtyDetails STANDARD PACK INNER CARTON BOX Qty OUTER CARTON BOX Qty Gr WtSize Size Packing Detail 2 13 PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR DIM MIN MAX All dimensions are in mm A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E— 0 . 8 8 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K1 2 . 7 0 — L 42 DEG 48 DEG A B C E K D G L H J Continental Device India Limited Data Sheet Page 2 of 3
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completelyreview our Data Sheet(s) so as to confirm that theDevice(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDILdoes not assumeliability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patentrights nor rights of others.These products are not designed for use in life saving/support appliances or systems. CDIL customers sellingthese products (either as individual Discrete Semiconductor Devices or incorporated in their endproducts), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3