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2N3439 | 2N3440 NPN LOW POWER TRANSISTORS - 1 CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com Part Number Package 19500/ Emitter/Base Voltage Collector Current 2N3439 TO-5/39 368 350V/450V 1.0A 2N3440 TO-5/39 368 250V/300V 1.0A ORDERING GUIDE JAN2N3439 JANTX2N3439 JANTXV2N3439 JAN2N3440 JANTX2N3440 JANTXV2N3440 KEY FEATURES JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/368 LOW ON RESISTANCE FAST SWITCHING HIGH OFF ISOLATION SECOND SOURCE FOR MICROSEMI DESIGNED FOR HIGH-VOLTAGE LOW CURRENT INVERTERS & HIGH FREQUENCY SWITCHING WITH SMALL PACKAGE ABSOLUTE MAXIMUM RATINGS Emitter-Base Voltage 7V Storage Temperature -65 to 200°C Thermal Impedance 175°C/W Operating Temperature -65 to 200°C Lead Temperature (1/16 from case, 10 sec) 300°C Power Dissipation Derating 0.8W @ TA =25°C 5.0W @ TC =25°C 4.75mW/°C for TA > 25°C 28.5mW/°C for TC > 25°C TO-5/39 PACKAGE OUTLINE & PIN CONNECTIONS Min. Max. Min. Max. CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 L1 0.050 1.27 L2 0.250 6.35 LC LD 0.016 0.019 0.41 0.48 LL LU 0.016 0.019 0.41 0.48 Q 0.030 0.76 r 0.010 0.25 TL 0.029 0.045 0.74 1.14 TW 0.028 0.034 0.71 0.86 α 45° TP Inches mm Dimensions Ltr 0.200 TP 5.08 TP see note 14 CD CH Q LU LL LD SEATING PLATE HD 1 2 3TW TL LC LC r α P Min. Max. Min. Max. CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 L1 0.050 1.27 L2 0.250 6.35 LC LD 0.016 0.019 0.41 0.48 LL LU 0.016 0.019 0.41 0.48 Q 0.030 0.76 r 0.010 0.25 TL 0.029 0.045 0.74 1.14 TW 0.028 0.034 0.71 0.86 α 45° TP Inches mm Dimensions Ltr 0.200 TP 5.08 TP see note 14 CD CH Q LU LL LD SEATING PLATE HD 1 2 3TW TL LC LC r α P
2N3439 | 2N3440 NPN LOW POWER TRANSISTORS - 2 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com 2n3439_40-ds-revA-0318.indd © 2018 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Symbol Min. Max. Unit Collector-Emitter Breakdown Voltage IC = 10mAdc, RBB1 = 470 Ω, VBB1 = 6Vdc, L = 25mH (min), f = 30-60Hz 2N3439 2N3440 V (BR)CEO 350 250 Vdc Vdc Collector-Emitter Cutoff Current V CE = 450Vdc, VBE = -1.5Vdc VCE = 300Vdc, VBE = -1.5Vdc 2N3439 2N3440 I CEX 5 µA Collector-Emitter Cutoff Current V CE = 300Vdc VCE = 200Vdc 2N3439 2N3440 I CEO 2 2 µA Emitter-Base Cutoff Current V EB = 7Vdc IEBO 10 µA Forward-Current Transfer Ratio I C = 20mAdc, VCE = 10Vdc IC = 2.0mAdc, VCE = 10Vdc IC = 0.2mAdc, VCE = 10Vdc hFE 160 Collector-Base Cutoff Current V CB = 360Vdc, 2N3439 VCB = 250Vdc, 2N3440 ICBO 2 2 µA Base-Emitter Saturated Voltage I B = 4mAdc, IC = 50mAdc VBE(sat) 1.3 Vdc Collector-Emitter Saturated Voltage I B = 4mAdc, IC = 50mAdc VCE(sat) 0.5 Vdc Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 10mAdc, VCE = 10Vdc, f = 5MHz |hfe| 3 15 Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 5mAdc, VCE = 10Vdc, f = 1.0kHz hfe 25 Output Capacitance Input Open Circuit V CB = 10Vdc, IE = 0Adc, 100kHz ≤ f ≤ 1.0MHz Cobo 10 pF Turn-On Time V CC = 200Vdc, IC = 20mAdc, IB1 = 2mAdc ton 1 µs Turn-Off Time V CC = 200Vdc, IC = 20mAdc, IB1 = -IB2 = 2mAdc toff 10 µs SAFE OPERATING AREA DC Tests (continuous) - TC = +25°C; t = 1.0s; 1 cycle Test 1 (2N3439 & 2N3440) - VCE = 5Vdc, IC = 1Adc Test 2 (2N3439) - VCE = 350Vdc, IC = 4mAdc Test 3 (2N3440) - VCE = 250Vdc, IC = 20mAdc