2N332 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
New Jersey Semi-Conductor Products, Ine. Sa < AT AST 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 2N332 - 2N336 NPN Silicon thru . . 2N332A - 2N336A Diffused Transistors APPLICATIONS MECHANICAL OUTLINE These transist \\ iti uz" “EMITTER 2-BASE ese transistors are general purpose sili- pa 35 90 7 con diffused transistors intended for ampli- he eos 45' fier applications in the audio and RF range ar? LX and for general purpose switching applica- 4 L {/ \\\\ 383" tions. These units are highly stable and Trost A J) | their variation in gain with current and 018 u iN x temperature is less than with grown junc- soo 1.900 029 MIN } —— tion types. .017 200 3-COLLECT Sim oe At DmEnsions mincnes MAXIMUM RATINGS Maximum Dissipation - Free Air 500mW Maximum Operating and/or Storage Temperature —65 to 200°C DESIGN CHARACTERISTICS AT 25°C cexcept as notes) | 2n332 2N332A | 2N333 | 2N333A | 2N334 | 2N334A | 2N335 | 2N335A | 2N336 | 2N336A BVcEq Ic=}mA, Ip=0 es BVeBo 'e=100)A, I¢=0 | 5 cr Ico Vop=30V, Ip=0 J - 2] sos} - 2] - os| - 2| -os| - 2} -os| - 2] - 08] 4 IeBo Vop-30V, Ig-0, T=150°C | soe] + 2] +e] + 20 | soe] oe w]e -) + w]e +] sw] y hip Io= 1A, Vop=SV, f= lke) 30+ 80} 30- 80 | 30-80 | 30- 80 | 30-80 | 30- 80 | 30- 80 | 30- 80 30- 80 | 30- 80 ; hob I¢=1HA, Vog=5V, f=1ke| 7 12 - 1.2 | + 12 - 12 + 12 = 12 + 12 7 12 - a + 1.2 | Ont VoE(sat) 1¢=5mA, Ig=2.2mA es oefoeod rs ee | rr | rs ce | se - ol MJ Semi-Conduetors reserves the right to change test conditions, parameter limits and package dimensions without notice Information furnished by NJ Semi-Cunductors is believed to be both accurate and reliable at the time of going to press. However NI Semi-Conductors assuines no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders .